Invention Application
US20130334469A1 AL-SB-TE PHASE CHANGE MATERIAL USED FOR PHASE CHANGE MEMORY AND FABRICATION METHOD THEREOF
有权
用于相位变化记忆的AL-SB-TE相变材料及其制造方法
- Patent Title: AL-SB-TE PHASE CHANGE MATERIAL USED FOR PHASE CHANGE MEMORY AND FABRICATION METHOD THEREOF
- Patent Title (中): 用于相位变化记忆的AL-SB-TE相变材料及其制造方法
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Application No.: US13202953Application Date: 2011-06-24
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Publication No.: US20130334469A1Publication Date: 2013-12-19
- Inventor: Cheng Peng , Liangcai Wu , Fang Rao , Zhitang Song , Bo Liu , Xilin Zhou , Min Zhu
- Applicant: Cheng Peng , Liangcai Wu , Fang Rao , Zhitang Song , Bo Liu , Xilin Zhou , Min Zhu
- Priority: CN201010619496.2 20101231
- International Application: PCT/CN11/76300 WO 20110624
- Main IPC: G11C11/56
- IPC: G11C11/56 ; C23C14/14 ; C01B19/00
Abstract:
The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Alx(SbyTe1)1-x, where 0
Public/Granted literature
- US08920684B2 Al-Sb-Te phase change material used for phase change memory and fabrication method thereof Public/Granted day:2014-12-30
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