发明申请
- 专利标题： TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 晶体管器件及其制造方法
-
申请号： US13525471申请日： 2012-06-18
-
公开(公告)号： US20130334600A1公开(公告)日： 2013-12-19
- 发明人: Ming-Shun Hsu , Wen-Peng Hsu , Ke-Feng Lin , Min-Hsuan Tsai , Chih-Chung Wang
- 申请人： Ming-Shun Hsu , Wen-Peng Hsu , Ke-Feng Lin , Min-Hsuan Tsai , Chih-Chung Wang
- 申请人地址： TW Hsinchu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A transistor device and a manufacturing method thereof are provided. The transistor device includes a substrate, a first well, a second well, a shallow trench isolation (STI), a source, a drain and a gate. The first well is disposed in the substrate. The second well is disposed in the substrate. The STI is disposed in the second well. The STI has at least one floating diffusion island. The source is disposed in the first well. The drain is disposed in the second well. The electric type of the floating diffusion island is different from or the same with that of the drain. The gate is disposed above the first well and the second well, and partially overlaps the first well and the second well.
公开/授权文献
- US08836067B2 Transistor device and manufacturing method thereof 公开/授权日：2014-09-16
信息查询
IPC分类:
