发明申请
US20130344683A1 Method and Apparatus for Plasma Dicing a Semi-conductor Wafer
有权
用于等离子体切割半导体晶片的方法和装置
- 专利标题： Method and Apparatus for Plasma Dicing a Semi-conductor Wafer
- 专利标题（中）： 用于等离子体切割半导体晶片的方法和装置
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申请号： US14014040申请日： 2013-08-29
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公开(公告)号： US20130344683A1公开(公告)日： 2013-12-26
- 发明人: Thierry Lazerand , David Pays-Volard , Linnell Martinez , Chris Johnson , Russell Westerman
- 申请人： Plasma-Therm LLC
- 申请人地址： US FL St. Petersburg
- 专利权人： Plasma-Therm LLC
- 当前专利权人： Plasma-Therm LLC
- 当前专利权人地址： US FL St. Petersburg
- 主分类号： H01L21/78
- IPC分类号： H01L21/78
摘要：
The present invention provides a method for plasma processing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing at least two cutting regions on the substrate, the cutting regions being positioned between all adjacent device structures on the substrate; generating a plasma using the plasma source; and processing the work piece using the generated plasma.
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