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公开(公告)号:US11488865B2
公开(公告)日:2022-11-01
申请号:US16381913
申请日:2019-04-11
申请人: Plasma-Therm LLC
发明人: Linnell Martinez , David Pays-Volard , Chris Johnson , David Johnson , Russell Westerman , Gordon M. Grivna
IPC分类号: H01L21/78 , H01J37/32 , H01L21/3065 , H01L21/67 , H01L21/683 , H01L21/687 , H01L21/02 , H01L21/66
摘要: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
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公开(公告)号:US20170033008A1
公开(公告)日:2017-02-02
申请号:US15287501
申请日:2016-10-06
申请人: Plasma-Therm LLC
发明人: Linnell Martinez , David Pays-Volard , Chris Johnson , David Johnson , Russell Westerman , Gordon M. Grivna
IPC分类号: H01L21/78 , H01L21/66 , H01L21/3065 , H01L21/306 , H01L21/683 , H01L21/67
CPC分类号: H01L21/78 , H01J37/32 , H01J37/32623 , H01L21/30621 , H01L21/3065 , H01L21/30655 , H01L21/67069 , H01L21/67092 , H01L21/6831 , H01L21/6833 , H01L21/6836 , H01L21/68735 , H01L21/68771 , H01L22/20 , H01L2221/68327
摘要: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
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公开(公告)号:US09343365B2
公开(公告)日:2016-05-17
申请号:US14014040
申请日:2013-08-29
申请人: Plasma-Therm LLC
发明人: Thierry Lazerand , David Pays-Volard , Linnell Martinez , Chris Johnson , Russell Westerman , Gordon M. Grivna
IPC分类号: H01L21/78 , H01J37/32 , H01L21/67 , H01L21/683 , H01L21/687 , H01L21/3065
CPC分类号: H01L21/78 , H01J37/3211 , H01L21/3065 , H01L21/30655 , H01L21/67069 , H01L21/6831 , H01L21/68735
摘要: The present invention provides a method for plasma processing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing at least two cutting regions on the substrate, the cutting regions being positioned between all adjacent device structures on the substrate; generating a plasma using the plasma source; and processing the work piece using the generated plasma.
摘要翻译: 本发明提供了一种等离子体处理衬底的方法,该方法包括提供具有壁的处理室; 提供与处理室的壁相邻的等离子体源; 在处理室内提供工件支撑; 将工件装载到工件支撑件上,工件具有支撑膜,框架和基板; 在所述基板上提供至少两个切割区域,所述切割区域位于所述基板上的所有相邻的装置结构之间; 使用等离子体源产生等离子体; 以及使用所产生的等离子体处理工件。
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公开(公告)号:US20140235034A1
公开(公告)日:2014-08-21
申请号:US13787153
申请日:2013-03-06
申请人: PLASMA-THERM LLC
发明人: David Pays-Volard , Linnell Martinez , Chris Johnson , David Johnson , Russell Westerman , Gordon M. Grivna
IPC分类号: H01L21/78 , H01L21/3065
CPC分类号: H01L21/78 , H01J37/32 , H01J37/32009 , H01J37/32532 , H01J37/32715 , H01J2237/334 , H01L21/0262 , H01L21/3065 , H01L21/30655 , H01L21/67069 , H01L21/67092 , H01L21/6831 , H01L21/68721 , H01L21/68735 , H01L21/68742 , H01L21/68771 , H01L22/12
摘要: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
摘要翻译: 本发明提供了一种等离子体切割基板的方法。 该方法包括提供具有壁的处理室; 提供与处理室的壁相邻的等离子体源; 在处理室内提供工件支撑; 将基板放置在框架上的支撑膜上以形成工件工件; 将工件装载到工件支架上; 提供用于将工件静电夹持到工件支撑件的夹紧电极; 在等离子体源和工件之间提供机械分隔; 通过等离子体源产生等离子体; 并通过产生的等离子体蚀刻工件。
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公开(公告)号:US20130344683A1
公开(公告)日:2013-12-26
申请号:US14014040
申请日:2013-08-29
申请人: Plasma-Therm LLC
IPC分类号: H01L21/78
CPC分类号: H01L21/78 , H01J37/3211 , H01L21/3065 , H01L21/30655 , H01L21/67069 , H01L21/6831 , H01L21/68735
摘要: The present invention provides a method for plasma processing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing at least two cutting regions on the substrate, the cutting regions being positioned between all adjacent device structures on the substrate; generating a plasma using the plasma source; and processing the work piece using the generated plasma.
摘要翻译: 本发明提供了一种等离子体处理衬底的方法,该方法包括提供具有壁的处理室; 提供与处理室的壁相邻的等离子体源; 在处理室内提供工件支撑; 将工件装载到工件支撑件上,工件具有支撑膜,框架和基板; 在所述基板上提供至少两个切割区域,所述切割区域位于所述基板上的所有相邻的装置结构之间; 使用等离子体源产生等离子体; 以及使用所产生的等离子体处理工件。
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公开(公告)号:US20130230974A1
公开(公告)日:2013-09-05
申请号:US13787032
申请日:2013-03-06
申请人: PLASMA-THERM LLC
IPC分类号: H01L21/78
CPC分类号: H01L21/78 , H01J37/32 , H01J37/32009 , H01J37/32532 , H01J37/32715 , H01J2237/334 , H01L21/0262 , H01L21/3065 , H01L21/30655 , H01L21/67069 , H01L21/67092 , H01L21/6831 , H01L21/68721 , H01L21/68735 , H01L21/68742 , H01L21/68771 , H01L22/12
摘要: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
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公开(公告)号:US20130230969A1
公开(公告)日:2013-09-05
申请号:US13764160
申请日:2013-02-11
申请人: PLASMA-THERM LLC
CPC分类号: H01L21/78 , H01J37/321 , H01J37/32155 , H01J37/32422 , H01J37/32623 , H01J37/32642 , H01J37/32651 , H01J37/32724 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/67011 , H01L21/67069 , H01L21/67739 , H01L21/68 , H01L21/6831 , H01L21/6833 , H01L21/68735 , H01L21/68742 , H01L21/782 , H01L2221/68327 , Y10S414/139
摘要: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
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公开(公告)号:US20230020438A1
公开(公告)日:2023-01-19
申请号:US17950048
申请日:2022-09-21
申请人: Plasma-Therm LLC
发明人: Linnell Martinez , David Pays-Volard , Chris Johnson , David Johnson , Russell Westerman , Gordon M. Grivna
IPC分类号: H01L21/78 , H01L21/67 , H01L21/687 , H01L21/683 , H01L21/3065 , H01J37/32 , H01L21/66 , H01L21/02
摘要: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
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公开(公告)号:US10573557B2
公开(公告)日:2020-02-25
申请号:US14729610
申请日:2015-06-03
申请人: Plasma-Therm LLC
发明人: David Pays-Volard , Linnell Martinez , Chris Johnson , David Johnson , Russell Westerman , Gordon M. Grivna
IPC分类号: H01L21/78 , H01J37/32 , H01L21/3065 , H01L21/02 , H01L21/683 , H01L21/67 , H01L21/687 , H01L21/66
摘要: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
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公开(公告)号:US20190244859A1
公开(公告)日:2019-08-08
申请号:US16381913
申请日:2019-04-11
申请人: Plasma-Therm LLC
发明人: Linnell Martinez , David Pays-Volard , Chris Johnson , David Johnson , Russell Westerman , Gordon M. Grivna
IPC分类号: H01L21/78 , H01J37/32 , H01L21/3065 , H01L21/687 , H01L21/683 , H01L21/67
CPC分类号: H01L21/78 , H01J37/32 , H01J37/32009 , H01J37/32532 , H01J37/32715 , H01J2237/334 , H01L21/0262 , H01L21/3065 , H01L21/30655 , H01L21/67069 , H01L21/67092 , H01L21/6831 , H01L21/68721 , H01L21/68735 , H01L21/68742 , H01L21/68771 , H01L22/12
摘要: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
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