公开(公告)号：US20190013243A1

公开(公告)日：2019-01-10

申请号：US16132040

申请日：2018-09-14

申请人： Plasma-Therm LLC

发明人： Chris Johnson ,  David Johnson ,  Linnell Martinez ,  David Pays-Volard ,  Rich Gauldin ,  Russell Westerman ,  Gordon M. Grivna

IPC分类号： H01L21/78 ,  H01L21/67 ,  H01J37/32 ,  H01L21/782 ,  H01L21/687 ,  H01L21/683 ,  H01L21/68 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/677

摘要： The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

公开(公告)号：USRE46339E1

公开(公告)日：2017-03-14

申请号：US14854127

申请日：2015-09-15

申请人： Plasma-Therm LLC

发明人： Rich Gauldin ,  Chris Johnson ,  David Johnson ,  Linnell Martinez ,  David Pays-Volard ,  Russell Westerman ,  Gordon Grivna

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/78 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065

CPC分类号： H01L21/78 ,  H01J37/32082 ,  H01J37/32422 ,  H01J37/32724 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  H01L21/67092 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68742 ,  Y10S414/139

摘要： The present invention provides a method for plasma dicing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing a work piece onto the work piece support, said work piece having a support film, a frame and the substrate; loading the work piece onto the work piece support; applying a tensional force to the support film; clamping the work piece to the work piece support; generating a plasma using the plasma source; and etching the work piece using the generated plasma.

摘要翻译： 本发明提供了一种用于等离子体切割基板的方法，该方法包括提供具有壁的处理室; 提供与处理室的壁相邻的等离子体源; 在处理室内提供工件支撑; 将工件放置在工件支撑件上，所述工件具有支撑膜，框架和基板; 将工件装载到工件支架上; 向支撑膜施加张力; 将工件夹紧在工件支架上; 使用等离子体源产生等离子体; 并使用所产生的等离子体蚀刻工件。

公开(公告)号：US09564366B2

公开(公告)日：2017-02-07

申请号：US14974840

申请日：2015-12-18

申请人： Plasma-Therm LLC

发明人： Linnell Martinez ,  David Pays-Volard ,  Chris Johnson ,  David Johnson ,  Russell Westerman ,  Gordon M. Grivna

IPC分类号： H01L21/78 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/782 ,  H01J37/32 ,  H01L21/68 ,  H01L21/311 ,  H01L21/677

CPC分类号： H01L21/78 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32651 ,  H01J37/32724 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/67011 ,  H01L21/67069 ,  H01L21/67739 ,  H01L21/68 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/782 ,  H01L2221/68327 ,  Y10S414/139

摘要： The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

摘要翻译： 本发明提供了一种等离子体切割基板的方法。 该方法包括提供具有壁的处理室; 提供与处理室的壁相邻的等离子体源; 在处理室内提供工件支撑; 将基板放置在框架上的支撑膜上以形成工件工件; 将工件装载到工件支架上; 提供设置在工件上方的盖环; 通过等离子体源产生等离子体; 并通过产生的等离子体蚀刻工件。

公开(公告)号：US11488865B2

公开(公告)日：2022-11-01

申请号：US16381913

申请日：2019-04-11

申请人： Plasma-Therm LLC

发明人： Linnell Martinez ,  David Pays-Volard ,  Chris Johnson ,  David Johnson ,  Russell Westerman ,  Gordon M. Grivna

IPC分类号： H01L21/78 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/02 ,  H01L21/66

摘要： The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

公开(公告)号：US20180254215A9

公开(公告)日：2018-09-06

申请号：US15148707

申请日：2016-05-06

申请人： Plasma-Therm, LLC

发明人： Peter Falvo ,  Linnell Martinez ,  David Pays-Volard ,  Rich Gauldin ,  Russell Westerman

IPC分类号： H01L21/78 ,  H01L21/3213 ,  H01L21/02

CPC分类号： H01L21/78 ,  B28D5/00 ,  H01L21/02052 ,  H01L21/32136 ,  H01L21/7813

摘要： The present invention provides a method for dicing a substrate with back metal, the method comprising the following steps. The substrate is provided with a first surface and a second surface wherein the second surface is opposed to the first surface. A mask layer is provided on the first surface of the substrate and a thin film layer is provided on the second surface of the substrate. The first surface of the substrate is diced through the mask layer to expose the thin film layer on the second surface of the substrate. A fluid from a fluid jet is applied to the thin film layer on the second surface of the substrate after the thin film layer has been exposed by the dicing step.

公开(公告)号：US20170033008A1

公开(公告)日：2017-02-02

申请号：US15287501

申请日：2016-10-06

申请人： Plasma-Therm LLC

发明人： Linnell Martinez ,  David Pays-Volard ,  Chris Johnson ,  David Johnson ,  Russell Westerman ,  Gordon M. Grivna

IPC分类号： H01L21/78 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/683 ,  H01L21/67

CPC分类号： H01L21/78 ,  H01J37/32 ,  H01J37/32623 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  H01L21/67092 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/6836 ,  H01L21/68735 ,  H01L21/68771 ,  H01L22/20 ,  H01L2221/68327

摘要： The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

公开(公告)号：US09343365B2

公开(公告)日：2016-05-17

申请号：US14014040

申请日：2013-08-29

申请人： Plasma-Therm LLC

发明人： Thierry Lazerand ,  David Pays-Volard ,  Linnell Martinez ,  Chris Johnson ,  Russell Westerman ,  Gordon M. Grivna

IPC分类号： H01L21/78 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065

CPC分类号： H01L21/78 ,  H01J37/3211 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/68735

摘要： The present invention provides a method for plasma processing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing at least two cutting regions on the substrate, the cutting regions being positioned between all adjacent device structures on the substrate; generating a plasma using the plasma source; and processing the work piece using the generated plasma.

摘要翻译： 本发明提供了一种等离子体处理衬底的方法，该方法包括提供具有壁的处理室; 提供与处理室的壁相邻的等离子体源; 在处理室内提供工件支撑; 将工件装载到工件支撑件上，工件具有支撑膜，框架和基板; 在所述基板上提供至少两个切割区域，所述切割区域位于所述基板上的所有相邻的装置结构之间; 使用等离子体源产生等离子体; 以及使用所产生的等离子体处理工件。

公开(公告)号：US20140235034A1

公开(公告)日：2014-08-21

申请号：US13787153

申请日：2013-03-06

申请人： PLASMA-THERM LLC

发明人： David Pays-Volard ,  Linnell Martinez ,  Chris Johnson ,  David Johnson ,  Russell Westerman ,  Gordon M. Grivna

IPC分类号： H01L21/78 ,  H01L21/3065

CPC分类号： H01L21/78 ,  H01J37/32 ,  H01J37/32009 ,  H01J37/32532 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  H01L21/67092 ,  H01L21/6831 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68771 ,  H01L22/12

摘要： The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

摘要翻译： 本发明提供了一种等离子体切割基板的方法。 该方法包括提供具有壁的处理室; 提供与处理室的壁相邻的等离子体源; 在处理室内提供工件支撑; 将基板放置在框架上的支撑膜上以形成工件工件; 将工件装载到工件支架上; 提供用于将工件静电夹持到工件支撑件的夹紧电极; 在等离子体源和工件之间提供机械分隔; 通过等离子体源产生等离子体; 并通过产生的等离子体蚀刻工件。

公开(公告)号：US20130344683A1

公开(公告)日：2013-12-26

申请号：US14014040

申请日：2013-08-29

申请人： Plasma-Therm LLC

发明人： Thierry Lazerand ,  David Pays-Volard ,  Linnell Martinez ,  Chris Johnson ,  Russell Westerman

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  H01J37/3211 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/68735

摘要： The present invention provides a method for plasma processing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing at least two cutting regions on the substrate, the cutting regions being positioned between all adjacent device structures on the substrate; generating a plasma using the plasma source; and processing the work piece using the generated plasma.

摘要翻译： 本发明提供了一种等离子体处理衬底的方法，该方法包括提供具有壁的处理室; 提供与处理室的壁相邻的等离子体源; 在处理室内提供工件支撑; 将工件装载到工件支撑件上，工件具有支撑膜，框架和基板; 在所述基板上提供至少两个切割区域，所述切割区域位于所述基板上的所有相邻的装置结构之间; 使用等离子体源产生等离子体; 以及使用所产生的等离子体处理工件。

公开(公告)号：US20130230974A1

公开(公告)日：2013-09-05

申请号：US13787032

申请日：2013-03-06

申请人： PLASMA-THERM LLC

发明人： Linnell Martinez ,  David Pays-Volard ,  Chris Johnson ,  David Johnson ,  Russell Westerman

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  H01J37/32 ,  H01J37/32009 ,  H01J37/32532 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  H01L21/67092 ,  H01L21/6831 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68771 ,  H01L22/12

摘要： The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.