A semiconductor device includes a doped layer which contains a first dopant of a first conductivity type. In the doped layer, a counter-doped zone is formed in an edge area that surrounds an element area of the semiconductor device. The counter-doped zone contains at least the first dopant and a second dopant of a second conductivity type, which is the opposite of the first conductivity type. A concentration of the second dopant is at least 20% and at most 100% of a concentration of the first dopant. The dopants in the counter-doped zone decrease charge carrier mobility and minority carrier lifetime such that the dynamic robustness of the semiconductor device is increased.