发明申请
- 专利标题: FinFET with High Mobility and Strain Channel
- 专利标题(中): 具有高迁移率和应变通道的FinFET
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申请号: US13542468申请日: 2012-07-05
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公开(公告)号: US20140008736A1公开(公告)日: 2014-01-09
- 发明人: Hou-Ju Li , Kao-Ting Lai , Kuo-Chiang Ting , Chi-Hsi Wu
- 申请人: Hou-Ju Li , Kao-Ting Lai , Kuo-Chiang Ting , Chi-Hsi Wu
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
An integrated circuit device includes a fin having a gate area beneath a gate electrode structure, a source/drain region disposed beyond ends of the fin, and a first conformal layer formed around an embedded portion of the source/drain region. A vertical sidewall of the first conformal layer is oriented parallel to the gate area.
公开/授权文献
- US09368628B2 FinFET with high mobility and strain channel 公开/授权日:2016-06-14