发明申请
US20140014967A1 Diffusion Barrier Layer for Group III Nitride on Silicon Substrate
有权
硅衬底上III族氮化物的扩散阻挡层
- 专利标题： Diffusion Barrier Layer for Group III Nitride on Silicon Substrate
- 专利标题（中）： 硅衬底上III族氮化物的扩散阻挡层
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申请号： US13549610申请日： 2012-07-16
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公开(公告)号： US20140014967A1公开(公告)日： 2014-01-16
- 发明人: Chi-Ming Chen , Han-Chin Chiu , Chung-Yi Yu , Chia-Shiung Tsai
- 申请人： Chi-Ming Chen , Han-Chin Chiu , Chung-Yi Yu , Chia-Shiung Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/267
- IPC分类号： H01L29/267 ; H01L21/20
摘要：
The present disclosure is directed to an integrated circuit and its formation. In some embodiments, the integrated circuit includes a diffusion barrier layer. The diffusion barrier layer can be arranged to prevent diffusion of the Si and O2 from a Si substrate into a Group III nitride layer. The diffusion barrier layer can comprise Al2O3. In some embodiments, the integrated circuit further comprises a lattice-matching structure disposed between the silicon substrate and a Group III nitride layer.
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