发明申请
- 专利标题： FIELD EFFECT TRANSISTORS WITH VARYING THRESHOLD VOLTAGES
- 专利标题（中）： 具有变化阈值电压的场效应晶体管
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申请号： US13545224申请日： 2012-07-10
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公开(公告)号： US20140015014A1公开(公告)日： 2014-01-16
- 发明人: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Alexander Reznicek , Thomas N. Adam
- 申请人： Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Alexander Reznicek , Thomas N. Adam
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/336 ; H01L29/78
摘要：
A method including providing a semiconductor substrate including a first semiconductor device and a second semiconductor device, the first and second semiconductor devices including dummy spacers, dummy gates, and extension regions; protecting the second semiconductor device with a mask; removing the dummy spacers from the first semiconductor device; and depositing in-situ doped epitaxial regions on top of the extension regions of the first semiconductor device.
公开/授权文献
- US08962434B2 Field effect transistors with varying threshold voltages 公开/授权日：2015-02-24
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