Invention Application
- Patent Title: ULTRA HIGH SELECTIVITY DOPED AMORPHOUS CARBON STRIPPABLE HARDMASK DEVELOPMENT AND INTEGRATION
- Patent Title (中): 超高选择性非晶态碳纳米管开发和集成
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Application No.: US14028025Application Date: 2013-09-16
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Publication No.: US20140017897A1Publication Date: 2014-01-16
- Inventor: Martin Jay SEAMONS , Sudha RATHI , Kwangduk Douglas LEE , Deenesh PADHI , Bok Hoen KIM , Chiu CHAN
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/64
- IPC: H01L21/64
Abstract:
Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a boron-containing amorphous carbon film is disclosed. The boron-containing amorphous carbon film comprises from about 10 to 60 atomic percentage of boron, from about 20 to about 50 atomic percentage of carbon, and from about 10 to about 30 atomic percentage of hydrogen.
Public/Granted literature
- US08993454B2 Ultra high selectivity doped amorphous carbon strippable hardmask development and integration Public/Granted day:2015-03-31
Information query
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