公开(公告)号：US20190153592A1

公开(公告)日：2019-05-23

申请号：US16259011

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Dale Du BOIS ,  Mohamad A. AYOUB ,  Robert KIM ,  Amit Kumar BANSAL ,  Mark FODOR ,  Binh NGUYEN ,  Siu F. CHENG ,  Hang YU ,  Chiu CHAN ,  Ganesh BALASUBRAMANIAN ,  Deenesh PADHI ,  Juan Carlos ROCHA

IPC: C23C16/04 ,  C23C16/458 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  C23C14/04 ,  H01L21/687 ,  C30B25/12 ,  H01J37/34

Abstract: Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.

公开(公告)号：US20140017897A1

公开(公告)日：2014-01-16

申请号：US14028025

申请日：2013-09-16

Applicant: Applied Materials, Inc.

Inventor： Martin Jay SEAMONS ,  Sudha RATHI ,  Kwangduk Douglas LEE ,  Deenesh PADHI ,  Bok Hoen KIM ,  Chiu CHAN

IPC: H01L21/64

CPC classification number: H01L21/64 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31144

Abstract: Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a boron-containing amorphous carbon film is disclosed. The boron-containing amorphous carbon film comprises from about 10 to 60 atomic percentage of boron, from about 20 to about 50 atomic percentage of carbon, and from about 10 to about 30 atomic percentage of hydrogen.

Abstract translation: 本发明的实施例一般涉及集成电路的制造，特别涉及在半导体衬底上沉积含硼无定形碳层。 在一个实施方案中，公开了含硼无定形碳膜。 含硼无定形碳膜包含约10至60原子百分数的硼，约20至约50原子百分比的碳和约10至约30原子百分比的氢。