公开(公告)号：US20230317463A1

公开(公告)日：2023-10-05

申请号：US18206037

申请日：2023-06-05

Applicant: Applied Materials, Inc.

Inventor： Krishna NITTALA ,  Sarah Michelle BOBEK ,  Kwangduk Douglas LEE ,  Ratsamee LIMDULPAIBOON ,  Dimitri KIOUSSIS ,  Karthik JANAKIRAMAN

IPC: H01L21/308 ,  H01L21/324 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/3081 ,  H01L21/324 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67115 ,  H01L21/3065

Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.

公开(公告)号：US20230203659A1

公开(公告)日：2023-06-29

申请号：US18111842

申请日：2023-02-20

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle BOBEK ,  Venkata Sharat Chandra PARIMI ,  Prashant Kumar KULSHRESHTHA ,  Vinay K. PRABHAKAR ,  Kwangduk Douglas LEE ,  Sungwon HA ,  Jian LI

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/46 ,  C23C16/4585

Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

公开(公告)号：US20210043455A1

公开(公告)日：2021-02-11

申请号：US16982789

申请日：2019-03-21

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bushra AFZAL ,  Sungwon HA ,  Vinay K. PRABHAKAR ,  Viren KALSEKAR ,  Satya Teja Babu THOKACHICHU ,  Edward P. HAMMOND, IV

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/46 ,  H01L21/02 ,  C23C16/26

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300C to about 700C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.

公开(公告)号：US20210017645A1

公开(公告)日：2021-01-21

申请号：US17040788

申请日：2019-04-09

Applicant: Applied Materials, Inc.

Inventor： Lu XU ,  Byung Seok KWON ,  Viren KALSEKAR ,  Vinay K. PRABHAKAR ,  Prashant Kumar KULSHRESHTHA ,  Dong Hyung LEE ,  Kwangduk Douglas LEE

IPC: C23C16/458 ,  C23C16/34 ,  C23C16/509 ,  C23C16/40 ,  C23C16/04 ,  C23C16/455 ,  C23C16/26

Abstract: Embodiments of the present invention generally relate to an apparatus for reducing arcing during thick film deposition in a plasma process chamber. In one embodiment, an edge ring including an inner edge diameter that is about 0.28 inches to about 0.38 inches larger than an outer diameter of a substrate is utilized when depositing a thick (greater than two microns) layer on the substrate. The layer may be a dielectric layer, such as a carbon hard mask layer, for example an amorphous carbon layer. With the 0.14 inches to 0.19 inches gap between the outer edge of substrate and the inner edge of the edge ring during the deposition of the thick layer, substrate support surface arcing is reduced while the layer thickness uniformity is maintained.

公开(公告)号：US20200328066A1

公开(公告)日：2020-10-15

申请号：US16829573

申请日：2020-03-25

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Dong Hyung LEE ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Ratsamee LIMDULPAIBOON ,  Irfan JAMIL ,  Pyeong Youn ROH ,  Jun MA ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/44 ,  C23C16/455

Abstract: A system and method for forming a film includes generating a plasma in a processing volume of a processing chamber to form the film on a substrate. The processing chamber may include a gas distributor configured to generate the plasma in the processing volume. Further, a barrier gas is provided into the processing volume to form a gas curtain around a plasma located in the processing volume. The barrier gas is supplied by a gas supply source through an inlet port disposed along a first side of the processing chamber. Further, an exhaust port is disposed along the first side of the processing chamber and the plasma and the barrier gas is purged via the exhaust port.

公开(公告)号：US20180226306A1

公开(公告)日：2018-08-09

申请号：US15944830

申请日：2018-04-04

Applicant: Applied Materials, Inc.

Inventor： Yoichi SUZUKI ,  Michael Wenyoung TSIANG ,  Kwangduk Douglas LEE ,  Takashi MORII ,  Yuta GOTO

IPC: H01L21/66 ,  H01L21/67 ,  C23C16/46 ,  H01L21/324 ,  H01L21/02 ,  C23C16/50 ,  C23C16/56 ,  H01L21/677 ,  C23C16/52

CPC classification number: H01L22/20 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/324 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67742 ,  H01L22/12

Abstract: The present disclosure generally relates to a method for performing semiconductor device fabrication, and more particularly, to improvements in lithographic overlay techniques. The method for improved overlay includes depositing a material on a substrate, heating a substrate in a chamber using thermal energy, measuring a local stress pattern of each substrate, wherein measuring the local stress pattern measures an amount of change in a depth of the deposited material on the substrate, plotting a plurality of points on a k map to determine a local stress pattern of the substrate, adjusting the thermal energy applied to the points on the k map, determining a sensitivity value for each of the points on the k map, and applying a correction factor to the applied thermal energy to adjust the local stress pattern.

公开(公告)号：US20170103893A1

公开(公告)日：2017-04-13

申请号：US15233351

申请日：2016-08-10

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Karthik Thimmavajjula NARASIMHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3065

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US20150247237A1

公开(公告)日：2015-09-03

申请号：US14594296

申请日：2015-01-12

Applicant: Applied Materials, Inc.

Inventor： Sungwon HA ,  Kwangduk Douglas LEE ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Martin Jay SEAMONS ,  Ziqing DUAN ,  Zheng John YE ,  Bok Hoen KIM ,  Lei JING ,  Ngoc LE ,  Ndanka MUKUTI

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45565 ,  C23C16/4401 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32449

Abstract: Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.

Abstract translation: 本文所述的实施例涉及一种用于提高膜均匀性的面板。 半导体处理装置包括具有不同孔洞密度区域的基座，边缘环和面板。 面板具有内部区域和围绕内部区域的外部区域。 当与外部区域相比时，内部区域具有通过其形成的更大密度的孔。 内部区域的尺寸被设计成与被处理的基底相对应，而外部区域的尺寸被设计成与边缘环相对应。

公开(公告)号：US20230029929A1

公开(公告)日：2023-02-02

申请号：US17963059

申请日：2022-10-10

Applicant: Applied Materials, Inc.

Inventor： Rajesh PRASAD ,  Sarah BOBEK ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Harry WHITESELL ,  Hidetaka OSHIO ,  Dong Hyung LEE ,  Deven Matthew Raj MITTAL ,  Scott FALK ,  Venkataramana R. CHAVVA

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/56 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

公开(公告)号：US20220262643A1

公开(公告)日：2022-08-18

申请号：US17179103

申请日：2021-02-18

Applicant: Applied Materials, Inc.

Inventor： Krishna NITTALA ,  Sarah Michelle BOBEK ,  Kwangduk Douglas LEE ,  Ratsamee LIMDULPAIBOON ,  Dimitri KIOUSSIS ,  Karthik JANAKIRAMAN

IPC: H01L21/308 ,  H01L21/324 ,  H01L21/3065 ,  H01L21/67

Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.