Invention Application
US20140034115A1 INSULATING LAYER PROVIDED METAL SUBSTRATE AND MANUFACTURING METHOD OF THE SAME 审中-公开
绝缘层提供的金属基材及其制造方法

  • Patent Title: INSULATING LAYER PROVIDED METAL SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
  • Patent Title (中): 绝缘层提供的金属基材及其制造方法
  • Application No.: US14046441
    Application Date: 2013-10-04
  • Publication No.: US20140034115A1
    Publication Date: 2014-02-06
  • Inventor: Keigo SATOYouta MIYASHITAShigenori YUUYA
  • Applicant: FUJIFILM Corporation
  • Applicant Address: JP Tokyo
  • Assignee: FUJIFILM Corporation
  • Current Assignee: FUJIFILM Corporation
  • Current Assignee Address: JP Tokyo
  • Priority: JP2011-083337 20110405; JP2011-212196 20110928; JP2011-212199 20110928; JP2012-042931 20120229
  • Main IPC: H01L31/02
  • IPC: H01L31/02
INSULATING LAYER PROVIDED METAL SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
Abstract:
An insulating layer provided metal substrate, including a metal substrate having a metallic aluminum on at least one surface and a composite structure layer formed of a porous aluminum oxide film provided on the metallic aluminum by anodization and an alkali metal silicate film covering pore surfaces of the porous aluminum oxide film, in which the mass ratio of silicon to aluminum in the composite structure layer is 0.001 to 0.2 at an arbitrary position within a region between a position 1 μm to the composite structure layer side in thickness from the interface between the composite structure layer and the metallic aluminum and a position 1 μm to the composite structure layer side in thickness from the interface between the composite structure layer and an upper layer on the opposite side of the metallic aluminum.
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