INSULATING LAYER PROVIDED METAL SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
    1.
    发明申请
    INSULATING LAYER PROVIDED METAL SUBSTRATE AND MANUFACTURING METHOD OF THE SAME 审中-公开
    绝缘层提供的金属基材及其制造方法

    公开(公告)号:US20140034115A1

    公开(公告)日:2014-02-06

    申请号:US14046441

    申请日:2013-10-04

    Abstract: An insulating layer provided metal substrate, including a metal substrate having a metallic aluminum on at least one surface and a composite structure layer formed of a porous aluminum oxide film provided on the metallic aluminum by anodization and an alkali metal silicate film covering pore surfaces of the porous aluminum oxide film, in which the mass ratio of silicon to aluminum in the composite structure layer is 0.001 to 0.2 at an arbitrary position within a region between a position 1 μm to the composite structure layer side in thickness from the interface between the composite structure layer and the metallic aluminum and a position 1 μm to the composite structure layer side in thickness from the interface between the composite structure layer and an upper layer on the opposite side of the metallic aluminum.

    Abstract translation: 绝缘层提供金属基板,其包括在至少一个表面上具有金属铝的金属基板和由通过阳极氧化提供在金属铝上的多孔氧化铝膜形成的复合结构层和覆盖金属铝的孔表面的碱金属硅酸盐膜 多孔氧化铝膜,其中复合结构层中的硅与铝的质量比在复合结构层之间的界面处的厚度与复合结构层侧的厚度1m之间的区域内的任意位置处为0.001至0.2 层和金属铝,并且复合结构层侧的复合结构层侧的复合结构层与金属铝的相反侧的上层之间的界面的厚度为1um。

    SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SEMICONDUCTOR DEVICE, SUBSTRATE FOR SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SUBSTRATE
    2.
    发明申请
    SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SEMICONDUCTOR DEVICE, SUBSTRATE FOR SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SUBSTRATE 审中-公开
    半导体器件,用于制造半导体器件的方法,用于半导体元件的衬底和用于生产衬底的方法

    公开(公告)号:US20130217236A1

    公开(公告)日:2013-08-22

    申请号:US13836657

    申请日:2013-03-15

    Abstract: A semiconductor device is provided with a porous structure layer formed by silicone resin between a substrate and a semiconductor element. Alternatively, a porous layer having a density of 0.7 g/cm3 or less, formed by a compound obtained by hydrolyzing and condensing at least one type of alkoxysilane selected from a group consisting of monoalkoxysilane, dialkoxysilane, and trialkoxysilane, and tetraalkoxysilane is provided between the substrate and the semiconductor element. As a further alternative, an adhesion layer formed by a compound obtained by hydrolyzing and condensing an alkoxysilane is provided on a resin substrate, and a porous layer having a density of 0.7 g/cm3 or less, formed by a compound obtained by hydrolyzing and condensing an alkoxysilane, is provided on the adhesion layer.

    Abstract translation: 半导体器件具有由硅树脂在衬底和半导体元件之间形成的多孔结构层。 或者,通过将由单烷氧基硅烷,二烷氧基硅烷和三烷氧基硅烷组成的组中选择的至少一种烷氧基硅烷水解和缩合得到的化合物和四烷氧基硅烷形成的密度为0.7g / cm 3以下的多孔层, 衬底和半导体元件。 作为另外的替代方案,在树脂基板上设置由通过水解和缩合烷氧基硅烷获得的化合物形成的粘附层,并且通过水解和冷凝获得的化合物形成密度为0.7g / cm 3以下的多孔层 在粘合层上设置有烷氧基硅烷。

    ANODIZING DEVICE, CONTINUOUS ANODIZING DEVICE, AND FILM FORMING METHOD
    3.
    发明申请
    ANODIZING DEVICE, CONTINUOUS ANODIZING DEVICE, AND FILM FORMING METHOD 审中-公开
    ANODIZING DEVICE,连续安定装置和薄膜成型方法

    公开(公告)号:US20140097090A1

    公开(公告)日:2014-04-10

    申请号:US14104646

    申请日:2013-12-12

    Abstract: An anodizing device has: a power supply drum that supports, in close contact therewith, a web consisting of an anodizable metal and has a part configured with a conductive material, to which the web is closely attached; a counter electrode provided facing the power supply drum; an electrolysis tank filled with an electrolyte, into which part of the power supply drum and the counter electrode are immersed; a protection member formed of a non-conductive material that protects the lateral direction end portions of the web supported by the power supply drum in close contact therewith and a portion of the power supply drum, to which the web is not closely attached, from the electrolyte; and a driver adapted to make the web and the protection member travel concurrently in the electrolyte in synchronization with the circumferential speed of the power supply drum.

    Abstract translation: 阳极氧化装置具有:电源鼓,其与其紧密接触地支撑由阳极氧化金属组成的网,并且具有配置有导电材料的部分,所述网紧紧地附接到所述导电材料; 面对电源鼓设置的对电极; 填充有电解质的电解槽,供电鼓和对电极的一部分浸入其中; 由不导电材料形成的保护构件,其保护由电源鼓支撑的幅材的横向端部与其紧密接触,并且将幅材不紧密地附接到的电源鼓的一部分从 电解液 以及适于使卷材和保护构件与电源鼓的圆周速度同步地在电解质中同时行进的驱动器。

Patent Agency Ranking