公开(公告)号：US20140016204A1

公开(公告)日：2014-01-16

申请号：US14028992

申请日：2013-09-17

Applicant: FUJIFILM Corporation

Inventor： Shinya HAKUTA ,  Shinichiro SONODA ,  Shigenori YUUYA

IPC: G02B1/11 ,  B29D11/00

CPC classification number: G02B1/11 ,  B29D11/00009 ,  G02B1/118 ,  G02B1/12

Abstract: Provided is an optical member, including: a substrate having an at least partially curved surface; a concave-convex structure at an outermost surface, the concave-convex structure being prepared by hydrothermal treatment of a layer formed by gas-phase deposition of at least one of simple aluminum and a compound containing aluminum on the substrate; and a dielectric layer formed by gas-phase deposition between the substrate and the concave-convex structure.

Abstract translation: 提供一种光学构件，包括：具有至少部分曲面的基板; 在最外表面的凹凸结构，所述凹凸结构通过水热处理在所述基板上通过气相沉积简单铝和含铝化合物形成的层来制备; 以及在基板和凹凸结构之间通过气相沉积形成的电介质层。

公开(公告)号：US20130230943A1

公开(公告)日：2013-09-05

申请号：US13855760

申请日：2013-04-03

Applicant: FUJIFILM CORPORATION

Inventor： Shigenori YUUYA

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L31/0322 ,  H01L31/03925 ,  H01L31/03928 ,  H01L31/046 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: A solar cell device is formed of an insulating layer provided metal substrate and a photoelectric conversion circuit, which includes a photoelectric conversion layer, an upper electrode, and a lower electrode, formed on the substrate. The substrate is constituted by a metal substrate and a porous Al anodized film. The metal substrate is formed of a base material of a metal having a higher rigidity, a high heat resistance, and a smaller linear thermal expansion coefficient than Al and an Al material integrated by pressure bonding to at least one surface thereof, and the porous Al anodized film is formed on a surface of the Al material.

Abstract translation: 太阳能电池器件由形成在基板上的由提供金属基板和光电转换电路的绝缘层形成，其包括光电转换层，上电极和下电极。 基板由金属基板和多孔Al阳极氧化膜构成。 金属基板由具有比Al更高的刚性，高耐热性和更小的线性热膨胀系数的金属的基材形成，并且通过压力结合到其至少一个表面的Al材料形成，并且多孔Al 阳极氧化膜形成在Al材料的表面上。

公开(公告)号：US20130026045A1

公开(公告)日：2013-01-31

申请号：US13648060

申请日：2012-10-09

Applicant: FUJIFILM CORPORATION

Inventor： Shigenori YUUYA

IPC: C25D17/06 ,  C25D19/00 ,  C25D7/06 ,  C25D21/00

CPC classification number: C25D11/005 ,  C25D11/045

Abstract: An anodizing apparatus includes: a power supplying drum for supporting a strip of an anodizable metal or a composite conductive foil having an anodizable metal on one surface thereof in close contact, at least a portion of the power supplying drum supporting the strip being conductive; opposing electrodes facing the power supplying drum; an electrolysis tank filled with an electrolytic solution in which a portion of the power supplying drum that supports the strip and the opposing electrodes are immersed; non conductive protective members that overlap the transverse ends of the strip on the power supplying drum and portions of the power supplying drum that the strip is not in contact with to protect the overlapped portions from the electrolytic solution; and a drive section that causes the strip and the protective members to move together within the electrolytic solution, synchronized with the rotating speed of the power supply drum.

Abstract translation: 阳极氧化装置包括：供电滚筒，用于在其一个表面上紧密接触地支撑具有阳极化金属的阳极氧化金属条或复合导电箔，所述供电滚筒的至少一部分支撑所述条是导电的; 面对供电鼓的相对电极; 填充有电解槽的电解槽，其中支撑所述带材的所述供电鼓的一部分和所述相对的电极被浸没; 非导电保护构件，其与供电鼓上的条的横向端部重叠，并且供电鼓的部分与带不接触以保护重叠部分免受电解溶液的影响; 以及驱动部，其使所述条带和所述保护部件在所述电解液中一起移动，与所述电源鼓的转速同步。

公开(公告)号：US20140034115A1

公开(公告)日：2014-02-06

申请号：US14046441

申请日：2013-10-04

Applicant: FUJIFILM Corporation

Inventor： Keigo SATO ,  Youta MIYASHITA ,  Shigenori YUUYA

IPC: H01L31/02

CPC classification number: H01L31/02008 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/1254 ,  C25D11/08 ,  C25D11/10 ,  C25D11/18 ,  C25D11/24 ,  C25D11/246 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  Y02E10/541 ,  Y02P70/521 ,  Y10T428/12458 ,  Y10T428/12632

Abstract: An insulating layer provided metal substrate, including a metal substrate having a metallic aluminum on at least one surface and a composite structure layer formed of a porous aluminum oxide film provided on the metallic aluminum by anodization and an alkali metal silicate film covering pore surfaces of the porous aluminum oxide film, in which the mass ratio of silicon to aluminum in the composite structure layer is 0.001 to 0.2 at an arbitrary position within a region between a position 1 μm to the composite structure layer side in thickness from the interface between the composite structure layer and the metallic aluminum and a position 1 μm to the composite structure layer side in thickness from the interface between the composite structure layer and an upper layer on the opposite side of the metallic aluminum.

Abstract translation: 绝缘层提供金属基板，其包括在至少一个表面上具有金属铝的金属基板和由通过阳极氧化提供在金属铝上的多孔氧化铝膜形成的复合结构层和覆盖金属铝的孔表面的碱金属硅酸盐膜 多孔氧化铝膜，其中复合结构层中的硅与铝的质量比在复合结构层之间的界面处的厚度与复合结构层侧的厚度1m之间的区域内的任意位置处为0.001至0.2 层和金属铝，并且复合结构层侧的复合结构层侧的复合结构层与金属铝的相反侧的上层之间的界面的厚度为1um。

公开(公告)号：US20130217236A1

公开(公告)日：2013-08-22

申请号：US13836657

申请日：2013-03-15

Applicant: Fujifilm Corporation

Inventor： Keigo SATO ,  Shigenori YUUYA

IPC: H01L21/02 ,  H01L21/324

CPC classification number: H01L21/02381 ,  H01L21/324 ,  H01L27/1218 ,  H01L27/1262 ,  H01L29/78603

Abstract: A semiconductor device is provided with a porous structure layer formed by silicone resin between a substrate and a semiconductor element. Alternatively, a porous layer having a density of 0.7 g/cm3 or less, formed by a compound obtained by hydrolyzing and condensing at least one type of alkoxysilane selected from a group consisting of monoalkoxysilane, dialkoxysilane, and trialkoxysilane, and tetraalkoxysilane is provided between the substrate and the semiconductor element. As a further alternative, an adhesion layer formed by a compound obtained by hydrolyzing and condensing an alkoxysilane is provided on a resin substrate, and a porous layer having a density of 0.7 g/cm3 or less, formed by a compound obtained by hydrolyzing and condensing an alkoxysilane, is provided on the adhesion layer.

Abstract translation: 半导体器件具有由硅树脂在衬底和半导体元件之间形成的多孔结构层。 或者，通过将由单烷氧基硅烷，二烷氧基硅烷和三烷氧基硅烷组成的组中选择的至少一种烷氧基硅烷水解和缩合得到的化合物和四烷氧基硅烷形成的密度为0.7g / cm 3以下的多孔层， 衬底和半导体元件。 作为另外的替代方案，在树脂基板上设置由通过水解和缩合烷氧基硅烷获得的化合物形成的粘附层，并且通过水解和冷凝获得的化合物形成密度为0.7g / cm 3以下的多孔层 在粘合层上设置有烷氧基硅烷。