Invention Application
US20140034808A1 CMOS IMAGE SENSOR SWITCH CIRCUIT FOR REDUCED CHARGE INJECTION
有权
用于降低充电注入的CMOS图像传感器开关电路
- Patent Title: CMOS IMAGE SENSOR SWITCH CIRCUIT FOR REDUCED CHARGE INJECTION
- Patent Title (中): 用于降低充电注入的CMOS图像传感器开关电路
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Application No.: US13563181Application Date: 2012-07-31
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Publication No.: US20140034808A1Publication Date: 2014-02-06
- Inventor: Guangbin Zhang , Dennis Lee
- Applicant: Guangbin Zhang , Dennis Lee
- Applicant Address: US CA Santa Clara
- Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H03K17/56
- IPC: H03K17/56 ; H01L27/146

Abstract:
A switch circuit including structures to reduce the effects of charge injection. In an embodiment, a first transistor of the switch circuit is to receive a first signal and first and second dummy transistors of the switch circuit are each to receive a second signal, wherein the first transistor is connected between the first and second dummy transistors. The second signal is complementary to the first signal. In another embodiment, the first transistor, the first dummy transistor and the second dummy transistors are each connected via respective body connections to a first low supply voltage.
Public/Granted literature
- US08816264B2 CMOS image sensor switch circuit for reduced charge injection Public/Granted day:2014-08-26
Information query
IPC分类: