Invention Application
- Patent Title: Non-volatile Resistive-Switching Memories
- Patent Title (中): 非易失性电阻开关存储器
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Application No.: US14046029Application Date: 2013-10-04
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Publication No.: US20140038352A1Publication Date: 2014-02-06
- Inventor: Prashant B Phatak , Tony P. Chiang , Pragati KUMAR , Michael Miller
- Applicant: Intermolecular Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular Inc.
- Current Assignee: Intermolecular Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L45/00
- IPC: H01L45/00

Abstract:
Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (eV), has a set voltage for a set operation of at least one volt per one hundred angstroms of a thickness of the metal oxide, and has a leakage current density less than 40 amps per square centimeter (A/cm2) measured at 0.5 volts (V) per twenty angstroms of the thickness of the metal oxide.
Public/Granted literature
- US08921156B2 Non-volatile resistive-switching memories Public/Granted day:2014-12-30
Information query
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