发明申请
- 专利标题： SEMICONDUCTOR BUFFER STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE USING THE SEMICONDUCTOR BUFFER STRUCTURE
- 专利标题（中）： 半导体缓冲器结构，半导体器件和使用半导体缓冲器结构制造半导体器件的方法
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申请号： US13835704申请日： 2013-03-15
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公开(公告)号： US20140042492A1公开(公告)日： 2014-02-13
- 发明人: Young-jo TAK , Jae-kyun KIM , Joo-sung KIM , Jun-youn KIM , Jae-won LEE , Hyo-ji CHOI
- 申请人： Young-jo TAK , Jae-kyun KIM , Joo-sung KIM , Jun-youn KIM , Jae-won LEE , Hyo-ji CHOI
- 优先权： KR10-2012-0087350 20120809
- 主分类号： H01L29/267
- IPC分类号： H01L29/267 ; H01L21/02
摘要：
A semiconductor buffer structure may include a silicon substrate and a buffer layer that is formed on the silicon substrate. The buffer layer may include a first layer, a second layer formed on the first layer, and a third layer formed on the second layer. The first layer may include AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and have a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer may include AlxInyGa1-x-yN (0≦x
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