发明申请
- 专利标题: CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件的接触结构
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申请号: US13571201申请日: 2012-08-09
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公开(公告)号: US20140042500A1公开(公告)日: 2014-02-13
- 发明人: Clement Hsingjen Wann , Ling-Yen Yeh , Chi-Yuan Shih , Yen-Yu Chen
- 申请人: Clement Hsingjen Wann , Ling-Yen Yeh , Chi-Yuan Shih , Yen-Yu Chen
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/20 ; H01L29/772
摘要:
The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a cavity below the major surface; a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; a Ge-containing dielectric layer over the strained material; and a metal layer over the Ge-containing dielectric layer.
公开/授权文献
- US09136383B2 Contact structure of semiconductor device 公开/授权日:2015-09-15