发明申请
- 专利标题： SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD AND OPERATING METHOD OF THE SAME
- 专利标题（中）： 半导体结构及其制造方法及其工作方法
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申请号： US13570411申请日： 2012-08-09
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公开(公告)号： US20140043067A1公开(公告)日： 2014-02-13
- 发明人: Shih-Hung Chen , Hang-Ting Lue
- 申请人： Shih-Hung Chen , Hang-Ting Lue
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H03K3/00
- IPC分类号： H03K3/00 ; H01L21/28 ; H01L23/48
摘要：
A semiconductor structure and a manufacturing method and an operating method of the same are provided. The semiconductor structure includes a substrate, a main body structure, a first dielectric layer, a first conductive strip, a second conductive strip, a second dielectric layer, and a conductive structure. The main body structure is formed on the substrate, and the first dielectric layer is formed on the substrate and surrounding two sidewalls and a top portion of the main body structure. The first conductive strip and the second conductive strip are formed on two sidewalls of the first dielectric layer, respectively. The second dielectric layer is formed on the first dielectric layer, the first conductive strip, and the second conductive strip. The conductive structure is formed on the second dielectric layer.
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