Invention Application
- Patent Title: NONVOLATILE MEMORY APPARATUS AND METHOD OF OPERATING THE SAME
- Patent Title (中): 非易失存储器装置及其操作方法
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Application No.: US13747777Application Date: 2013-01-23
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Publication No.: US20140050005A1Publication Date: 2014-02-20
- Inventor: Hyun-sik CHOI , Ho-jung KIM , U-in CHUNG
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si
- Priority: KR10-2012-0089669 20120816
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C17/00 ; G11C11/16 ; G11C13/00

Abstract:
Nonvolatile memory apparatuses and methods of operating the same. A nonvolatile memory apparatus includes a nonvolatile memory cell array including a plurality of memory cells; an address decoder configured to receive computation data that indicates a computation from among a plurality of computations and an input data for computation, and the address decoder configured to output an address of the nonvolatile memory cell array corresponding to the indicated computation and input data, the nonvolatile memory cell array being configured to output result data stored at the output address, the result data corresponding to a previous computation performed before receipt of the computation data; and a reading unit configured to read the result data output from the nonvolatile memory cell array.
Information query