发明申请
US20140054651A1 RELIABLE NANOFET BIOSENSOR PROCESS WITH HIGH-K DIELECTRIC
审中-公开
具有高K电介质的可靠的纳米ZnO生物传感器工艺
- 专利标题： RELIABLE NANOFET BIOSENSOR PROCESS WITH HIGH-K DIELECTRIC
- 专利标题（中）： 具有高K电介质的可靠的纳米ZnO生物传感器工艺
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申请号： US13992217申请日： 2011-11-18
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公开(公告)号： US20140054651A1公开(公告)日： 2014-02-27
- 发明人: Rashid Bashir , Bobby Reddy , Brian Ross Dorvel
- 申请人： Rashid Bashir , Bobby Reddy , Brian Ross Dorvel
- 申请人地址： US IL Urbana
- 专利权人： The Board of Trustees of the University of Illinois
- 当前专利权人： The Board of Trustees of the University of Illinois
- 当前专利权人地址： US IL Urbana
- 国际申请： PCT/US11/61524 WO 20111118
- 主分类号： G01N27/414
- IPC分类号： G01N27/414
摘要：
Provided are semiconductor field effect sensors including a high-k thin film gate dielectric. The semiconductor field effect sensors described herein exhibit high detection sensitivity and enhanced reliability when placed in contact with liquids. Also disclosed are semiconductor field effect sensors having optimized fluid gate electrode voltages and/or back gate electrode voltages for improved detection sensitivity.