RELIABLE NANOFET BIOSENSOR PROCESS WITH HIGH-K DIELECTRIC
    1.
    发明申请
    RELIABLE NANOFET BIOSENSOR PROCESS WITH HIGH-K DIELECTRIC 审中-公开
    具有高K电介质的可靠的纳米ZnO生物传感器工艺

    公开(公告)号:US20140054651A1

    公开(公告)日:2014-02-27

    申请号:US13992217

    申请日:2011-11-18

    IPC分类号: G01N27/414

    CPC分类号: G01N27/4145

    摘要: Provided are semiconductor field effect sensors including a high-k thin film gate dielectric. The semiconductor field effect sensors described herein exhibit high detection sensitivity and enhanced reliability when placed in contact with liquids. Also disclosed are semiconductor field effect sensors having optimized fluid gate electrode voltages and/or back gate electrode voltages for improved detection sensitivity.

    摘要翻译: 提供了包括高k薄膜栅极电介质的半导体场效应传感器。 当与液体接触时,本文所述的半导体场效应传感器表现出高检测灵敏度和增强的可靠性。 还公开了具有优化的流体栅电极电压和/或背栅电极电压的半导体场效应传感器,以提高检测灵敏度。