发明申请
- 专利标题： CIRCULAR TRANSMISSION LINE METHODS COMPATIBLE WITH COMBINATORIAL PROCESSING OF SEMICONDUCTORS
- 专利标题（中）： 圆形传输线方法与半导体的组合处理兼容
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申请号： US13594292申请日： 2012-08-24
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公开(公告)号： US20140055152A1公开(公告)日： 2014-02-27
- 发明人: Amol Joshi , Charlene Chen , John Foster , Zhendong Hong , Olov Karlsson , Bei Li , Dipankar Pramanik , Usha Raghuram , Mark Victor Raymond , Jingang Su , Bin Yang
- 申请人： Amol Joshi , Charlene Chen , John Foster , Zhendong Hong , Olov Karlsson , Bei Li , Dipankar Pramanik , Usha Raghuram , Mark Victor Raymond , Jingang Su , Bin Yang
- 申请人地址： US KY Grand Cayman US CA San Jose
- 专利权人： Globalfoundries, Inc.,Intermolecular, Inc.
- 当前专利权人： Globalfoundries, Inc.,Intermolecular, Inc.
- 当前专利权人地址： US KY Grand Cayman US CA San Jose
- 主分类号： G01R27/08
- IPC分类号： G01R27/08
摘要：
Methods and structures are described for determining contact resistivities and Schottky barrier heights for conductors deposited on semiconductor wafers that can be combined with combinatorial processing, allowing thereby numerous processing conditions and materials to be tested concurrently. Methods for using multi-ring as well as single-ring CTLM structures to cancel parasitic resistance are also described, as well as structures and processes for inline monitoring of properties.
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