发明申请
- 专利标题： NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE
- 专利标题（中）： 非易失性存储元件和非易失性存储器件
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申请号： US13995383申请日： 2012-10-22
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公开(公告)号： US20140061579A1公开(公告)日： 2014-03-06
- 发明人: Zhiqiang Wei , Takeshi Takagi , Koji Katayama
- 申请人： Zhiqiang Wei , Takeshi Takagi , Koji Katayama
- 申请人地址： JP Osaka
- 专利权人： PANASONIC CORPORATION
- 当前专利权人： PANASONIC CORPORATION
- 当前专利权人地址： JP Osaka
- 优先权： JP2011-233306 20111024
- 国际申请： PCT/JP2012/006734 WO 20121022
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L27/24
摘要：
A variable resistance nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer including: a first oxide layer including a metal oxide having non-stoichiometric composition and including p-type carriers; a second oxide layer located between and in contact with the first oxide layer and a second electrode and including a metal oxide having non-stoichiometric composition and including n-type carriers; an oxygen reservoir region located in the first oxide layer, having no contact with the first electrode, and having an oxygen content atomic percentage higher than that of the first oxide layer; and a local region located in the second oxide layer, having contact with the oxygen reservoir region, and having an oxygen content atomic percentage lower than that of the second oxide layer.
公开/授权文献
- US08957399B2 Nonvolatile memory element and nonvolatile memory device 公开/授权日：2015-02-17
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