发明申请
- 专利标题： Semiconductor Device with a Passivation Layer
- 专利标题（中）： 具有钝化层的半导体器件
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申请号： US13598488申请日： 2012-08-29
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公开(公告)号： US20140061733A1公开(公告)日： 2014-03-06
- 发明人: Gerhard Schmidt , Josef-Georg Bauer , Carsten Schaeffer , Oliver Humbel , Angelika Koprowski , Sirinpa Monayakul
- 申请人： Gerhard Schmidt , Josef-Georg Bauer , Carsten Schaeffer , Oliver Humbel , Angelika Koprowski , Sirinpa Monayakul
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/872 ; H01L21/28 ; H01L29/78
摘要：
A semiconductor device includes a semiconductor body with a first surface, a contact electrode arranged on the first surface, and a passivation layer on the first surface adjacent the contact electrode. The passivation layer includes a layer stack with an amorphous semi-insulating layer on the first surface, a first nitride layer on the amorphous semi-insulating layer, and a second nitride layer on the first nitride layer.
公开/授权文献
- US08884342B2 Semiconductor device with a passivation layer 公开/授权日：2014-11-11
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