公开(公告)号：US09022238B2

公开(公告)日：2015-05-05

申请号：US13496731

申请日：2010-09-16

申请人： Udo Bremekamp ,  Gerhard Schmidt

发明人： Udo Bremekamp ,  Gerhard Schmidt

IPC分类号： B61D17/06

CPC分类号： B61D17/06

摘要： A railway vehicle has a cover for a front coupling of the railway vehicle. The cover is formed of at least one displaceable front hatch that can be displaced by a drive between an opened and a closed end position. A displacement of the at least one front hatch is guided such that the displacement takes place along a circular segment path about a rotary axis.

摘要翻译： 铁路车辆具有用于铁路车辆的前联接器的盖。 所述盖由至少一个可移位的前舱口形成，所述至少一个可移动的前舱口可以由打开位置和闭合端位置之间的驱动器移位。 引导至少一个前舱口的位移，使得沿着围绕旋转轴线的圆形段路径发生位移。

公开(公告)号：US08759935B2

公开(公告)日：2014-06-24

申请号：US13152373

申请日：2011-06-03

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L31/102

CPC分类号： H01L29/0626 ,  H01L21/26513 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/167 ,  H01L29/861 ,  H01L29/8611

摘要： A power semiconductor device includes an active device region disposed in a semiconductor substrate, an edge termination region disposed in the semiconductor substrate between the active device region and a lateral edge of the semiconductor substrate and a trench disposed in the edge termination region which extends from a first surface of the semiconductor substrate toward a second opposing surface of the semiconductor substrate. The trench has an inner sidewall, an outer sidewall and a bottom. The inner sidewall is spaced further from the lateral edge of the semiconductor substrate than the outer sidewall, and an upper portion of the outer sidewall is doped opposite as the inner sidewall and bottom of the trench to increase the blocking voltage capacity. Other structures can be provided which yield a high blocking voltage capacity such as a second trench or a region of chalcogen dopant atoms disposed in the edge termination region.

摘要翻译： 功率半导体器件包括设置在半导体衬底中的有源器件区域，设置在半导体衬底中的有源器件区域和半导体衬底的侧边缘之间的边缘终端区域和设置在边缘终止区域中的沟槽，该沟槽从 半导体衬底的第一表面朝向半导体衬底的第二相对表面。 沟槽具有内侧壁，外侧壁和底部。 内侧壁比半导体衬底的侧边缘更远离外侧壁，并且外侧壁的上部与沟槽的内侧壁和底部相反地被掺杂以增加阻挡电压容量。 可以提供其它结构，其产生高阻挡电压容量，例如设置在边缘终止区域中的第二沟槽或硫属元素掺杂剂原子的区域。

公开(公告)号：US08710615B2

公开(公告)日：2014-04-29

申请号：US13222048

申请日：2011-08-31

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L31/08

CPC分类号： G01K7/18 ,  H01L28/22 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1604 ,  H01L29/408 ,  H01L29/7395 ,  H01L29/7811 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to an embodiment, a semiconductor device includes a semiconductor substrate and an amorphous semi-insulating layer on the semiconductor substrate.

摘要翻译： 根据实施例，半导体器件在半导体衬底上包括半导体衬底和非晶半绝缘层。

公开(公告)号：US08564088B2

公开(公告)日：2013-10-22

申请号：US12194249

申请日：2008-08-19

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L23/58 ,  H01L29/78

CPC分类号： H01L29/0661 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/66128 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor body, a semiconductor device has an active region with a vertical drift section of a first conduction type and a near-surface lateral well of a second, complementary conduction type. An edge region surrounding this active region comprises a variably laterally doped doping material zone (VLD zone). This VLD zone likewise has the second, complementary conduction type and adjoins the well. The concentration of doping material of the VLD zone decreases to the concentration of doping material of the drift section along the VLD zone towards a semiconductor chip edge. Between the lateral well and the VLD zone, a transitional region is provided which contains at least one zone of complementary doping located at a vertically lower point than the well in the semiconductor body.

摘要翻译： 在半导体本体中，半导体器件具有具有第一导电类型的垂直漂移部分和第二互补导电类型的近表面侧向阱的有源区域。 围绕该有源区域的边缘区域包括可变的横向掺杂的掺杂材料区域（VLD区域）。 该VLD区域同样具有第二互补导电类型并且与阱相邻。 VLD区域的掺杂材料的浓度降低到沿着VLD区域的漂移部分的掺杂材料朝向半导体芯片边缘的浓度。 在横向阱和VLD区之间，提供过渡区，其包含位于比半导体本体中的阱垂直较低点的至少一个互补掺杂区。

公开(公告)号：US08536451B2

公开(公告)日：2013-09-17

申请号：US13131148

申请日：2009-09-15

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H02G7/20

CPC分类号： B61G5/10

摘要： A high-voltage connection between two post insulators which can be moved relative to one another. In order to be able to implement such a high-voltage connection in the most compact form possible with regard to insulating air gaps, the high-voltage connection has a current conduction rod, which is surrounded by an insulating body and mounted at one end thereof on the one post insulator at an adjustable distance and at the other end thereof is held on the other post insulator. Outgoing current leads are connected to each end of the current conduction rod. An electric rail vehicle has at least two cars, each having a high-voltage line run in the roof and each having a post insulator on the roof in the area of the mutually facing ends of the cars. The high-voltage connection according to the invention is used in order to achieve an aerodynamically favorable design in the bridging area of the roof area of the cars.

摘要翻译： 两个柱塞绝缘子之间的高压连接可相对于彼此移动。 为了能够以关于绝缘空气间隙的最紧凑的形式实现这种高压连接，高压连接具有电流传导杆，其被绝缘体包围并安装在其一端 在可调距离的一个柱状绝缘体上，另一端固定在另一个柱绝缘体上。 输出电流引线连接到电流传导棒的每一端。 电动轨道车辆具有至少两辆轿车，每辆轿厢均具有在屋顶上行驶的高压线路，并且在汽车的相互面向端部的区域中的每一个车顶上具有柱绝缘体。 使用根据本发明的高压连接以便在汽车屋顶区域的桥接区域中实现空气动力学有利的设计。

公开(公告)号：US20130208905A1

公开(公告)日：2013-08-15

申请号：US13591667

申请日：2012-08-22

申请人： Mohamed Krini ,  Gerhard Schmidt ,  Bernd Iser ,  Arthur Wolf

发明人： Mohamed Krini ,  Gerhard Schmidt ,  Bernd Iser ,  Arthur Wolf

IPC分类号： G10L21/0208

CPC分类号： G10L21/0208 ,  G10K11/002 ,  G10L19/0204 ,  G10L21/02 ,  G10L2021/02082

摘要： Embodiments of the present invention exploit redundancy of succeeding FFT spectra and use this redundancy for computing interpolated temporal supporting points. An analysis filter bank converts overlapped sequences of an audio (ex. loudspeaker) signal from a time domain to a frequency domain to obtain a time series of short-time loudspeaker spectra. An interpolator temporally interpolates this time series. The interpolation is fed to an echo canceller, which computes an estimated echo spectrum. A microphone analysis filter bank converts overlapped sequences of an audio microphone signal from the time domain to the frequency domain to obtain a time series of short-time microphone spectra. The estimated echo spectrum is subtracted from the microphone spectrum. Further signal enhancement (filtration) may be applied. A synthesis filter bank converts the filtered microphone spectra to the time domain to generate an echo compensated audio microphone signal. Computational complexity of signal processing systems can, therefore, be reduced.

摘要翻译： 本发明的实施例利用后续FFT频谱的冗余并使用该冗余来计算内插的时间支持点。 分析滤波器组将来自时域的音频（例如扬声器）信号的重叠序列转换为频域以获得短时间扬声器频谱的时间序列。 内插器对时间序列进行时间插值。 内插被馈送到回波消除器，该消除器计算估计的回波频谱。 麦克风分析滤波器组将音频麦克风信号的重叠序列从时域转换到频域，以获得短时间麦克风频谱的时间序列。 从麦克风频谱中减去估计回波频谱。 可以应用进一步的信号增强（过滤）。 合成滤波器组将滤波的麦克风谱转换为时域以产生回波补偿的音频麦克风信号。 因此，可以减少信号处理系统的计算复杂度。

公开(公告)号：US08361893B2

公开(公告)日：2013-01-29

申请号：US13075475

申请日：2011-03-30

申请人： Gerhard Schmidt ,  Hans-Joachim Schulze ,  Bernd Kolbesen

发明人： Gerhard Schmidt ,  Hans-Joachim Schulze ,  Bernd Kolbesen

IPC分类号： H01L21/265

CPC分类号： H01L29/0607 ,  H01L21/223 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/0843 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1016 ,  H01L29/167 ,  H01L29/66136 ,  H01L29/66348 ,  H01L29/66363 ,  H01L29/66712 ,  H01L29/66909 ,  H01L29/7397 ,  H01L29/7802

摘要： An undoped semiconductor substrate is doped by applying stress at a side of the undoped semiconductor substrate to release self interstitials in the substrate and implanting chalcogen atoms into the side of the substrate. The substrate is annealed to form a first semiconductor region containing the chalcogen atoms and a second semiconductor region devoid of the chalcogen atoms. The first semiconductor region has a doping concentration higher than the doping concentration of the second semiconductor region. The indiffusion of chalcogen atoms into a semiconductor material in the presence of self interstitials can also be used to form field stop regions in power semiconductor devices.

摘要翻译： 通过在未掺杂的半导体衬底的一侧施加应力来掺杂未掺杂的半导体衬底，以释放衬底中的自间隙并将硫属原子注入到衬底的侧面。 将衬底退火以形成含有硫属原子的第一半导体区域和没有硫属原子的第二半导体区域。 第一半导体区域的掺杂浓度高于第二半导体区域的掺杂浓度。 在存在自填隙的情况下将硫属原子向半导体材料中的扩散也可用于在功率半导体器件中形成场停止区。

公开(公告)号：US20120248576A1

公开(公告)日：2012-10-04

申请号：US13075475

申请日：2011-03-30

申请人： Gerhard Schmidt ,  Hans-Joachim Schulze ,  Bernd Kolbesen

发明人： Gerhard Schmidt ,  Hans-Joachim Schulze ,  Bernd Kolbesen

IPC分类号： H01L21/425 ,  H01L29/06

CPC分类号： H01L29/0607 ,  H01L21/223 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/0843 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1016 ,  H01L29/167 ,  H01L29/66136 ,  H01L29/66348 ,  H01L29/66363 ,  H01L29/66712 ,  H01L29/66909 ,  H01L29/7397 ,  H01L29/7802

摘要： An undoped semiconductor substrate is doped by applying stress at a side of the undoped semiconductor substrate to release self interstitials in the substrate and implanting chalcogen atoms into the side of the substrate. The substrate is annealed to form a first semiconductor region containing the chalcogen atoms and a second semiconductor region devoid of the chalcogen atoms. The first semiconductor region has a doping concentration higher than the doping concentration of the second semiconductor region. The indiffusion of chalcogen atoms into a semiconductor material in the presence of self interstitials can also be used to form field stop regions in power semiconductor devices.

摘要翻译： 通过在未掺杂的半导体衬底的一侧施加应力来掺杂未掺杂的半导体衬底，以释放衬底中的自间隙并将硫属原子注入到衬底的侧面。 将衬底退火以形成含有硫属原子的第一半导体区域和没有硫属原子的第二半导体区域。 第一半导体区域的掺杂浓度高于第二半导体区域的掺杂浓度。 在存在自填隙的情况下将硫属原子向半导体材料中的扩散也可用于在功率半导体器件中形成场停止区。

公开(公告)号：US07951676B2

公开(公告)日：2011-05-31

申请号：US12201371

申请日：2008-08-29

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L29/76 ,  H01L21/06

CPC分类号： H01L29/7813 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/1095 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/513 ,  H01L29/7397 ,  H01L29/7811

摘要： The semiconductor device has a semiconductor body with a semiconductor device structure. The semiconductor device structure has a first electrode, a second electrode and a gate electrode. The gate electrode is designed to form a conductive channel region. An insulating layer at least partially surrounds the gate electrode. A semi-insulating layer is provided between the gate electrode and at least one of the first electrode and the second electrode. The semi-insulating layer is located outside the conductive channel region and has an interface state density which is greater than the quotient of the breakdown charge and the band gap of the material of the semiconductor body.

摘要翻译： 半导体器件具有半导体器件结构的半导体本体。 半导体器件结构具有第一电极，第二电极和栅电极。 栅电极被设计成形成导电沟道区域。 绝缘层至少部分地围绕栅电极。 在栅电极和第一电极和第二电极中的至少一个之间提供半绝缘层。 半绝缘层位于导电沟道区域的外部，并且具有大于击穿电荷和半导体本体的材料的带隙的商的界面态密度。

公开(公告)号：US20100320535A1

公开(公告)日：2010-12-23

申请号：US12486461

申请日：2009-06-17

申请人： Gerhard Schmidt

发明人： Gerhard Schmidt

IPC分类号： H01L29/772

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/432 ,  H01L29/49 ,  H01L29/4916 ,  H01L29/4925 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/7835 ,  H01L29/802 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/8613 ,  H01L29/872

摘要： Disclosed is a semiconductor component, including: a drift zone arranged between a first and a second connection zone; a channel control layer of an amorphous semi-insulating material arranged adjacent to the drift zone.

摘要翻译： 公开了一种半导体部件，包括：布置在第一和第二连接区之间的漂移区; 布置在漂移区附近的非晶半绝缘材料的沟道控制层。