发明申请
- 专利标题： FinFET CIRCUIT
- 专利标题（中）： FinFET电路
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申请号： US13602714申请日： 2012-09-04
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公开(公告)号： US20140061744A1公开(公告)日： 2014-03-06
- 发明人: Ron Zhang , Lew G. Chua-Eoan , Shiqun Gu
- 申请人： Ron Zhang , Lew G. Chua-Eoan , Shiqun Gu
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L29/66
摘要：
A capacitor includes a semiconductor substrate. The capacitor also includes a first terminal having a fin disposed on a surface of the semiconductor substrate. The capacitor further includes a dielectric layer disposed onto the fin. The capacitor still further includes a second terminal having a FinFET compatible high-K metal gate disposed proximate and adjacent to the fin.
公开/授权文献
- US09142548B2 FinFET compatible capacitor circuit 公开/授权日：2015-09-22