发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US13727160申请日： 2012-12-26
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公开(公告)号： US20140061763A1公开(公告)日： 2014-03-06
- 发明人: Misako Morota , Hideyuki Nishizawa , Masaya Terai , Shigeki Hattori , Koji Asakawa
- 申请人： Misako Morota , Hideyuki Nishizawa , Masaya Terai , Shigeki Hattori , Koji Asakawa
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L29/66
摘要：
A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.
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