发明申请
US20140063921A1 METHOD AND SYSTEM FOR PROVIDING INVERTED DUAL MAGNETIC TUNNELING JUNCTION ELEMENTS 有权
用于提供反转双磁性连接元件的方法和系统

  • 专利标题: METHOD AND SYSTEM FOR PROVIDING INVERTED DUAL MAGNETIC TUNNELING JUNCTION ELEMENTS
  • 专利标题(中): 用于提供反转双磁性连接元件的方法和系统
  • 申请号: US13045528
    申请日: 2011-03-11
  • 公开(公告)号: US20140063921A1
    公开(公告)日: 2014-03-06
  • 发明人: Xueti TangJing Wu
  • 申请人: Xueti TangJing Wu
  • 申请人地址: US CA Milpitas
  • 专利权人: GRANDIS, INC.
  • 当前专利权人: GRANDIS, INC.
  • 当前专利权人地址: US CA Milpitas
  • 主分类号: G11C11/16
  • IPC分类号: G11C11/16 H01L43/12
METHOD AND SYSTEM FOR PROVIDING INVERTED DUAL MAGNETIC TUNNELING JUNCTION ELEMENTS
摘要:
A method and system for providing a magnetic junction residing on a substrate and usable in a magnetic device are described. The magnetic junction includes a first pinned layer, a first nonmagnetic spacer layer having a first thickness, a free layer, a second nonmagnetic spacer layer having a second thickness greater than the first thickness, and a second pinned layer. The first nonmagnetic spacer layer resides between the pinned layer and the free layer. The first pinned layer resides between the free layer and the substrate. The second nonmagnetic spacer layer is between the free layer and the second pinned layer. Further, the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
信息查询
0/0