Invention Application
- Patent Title: PHOTODETECTOR CIRCUIT AND SEMICONDUCTOR DEVICE
- Patent Title (中): 光电二极管和半导体器件
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Application No.: US14018465Application Date: 2013-09-05
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Publication No.: US20140070079A1Publication Date: 2014-03-13
- Inventor: Yoshiyuki Kurokawa , Takuya Tsurume
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP2012-200495 20120912
- Main IPC: H01L27/144
- IPC: H01L27/144 ; H01L27/146

Abstract:
To provide a photodetector circuit capable of obtaining signals in different periods without being affected by characteristics of a photoelectric conversion element. The photodetector circuit has n signal output circuits (n is a natural number of 2 or more) connected to the photoelectric conversion element. Further, the n signal output circuits each include the following: a transistor whose gate potential varies in accordance with the amount of light entering the photoelectric conversion element; a first switching element which holds the gate potential of the transistor; and a second switching element which controls a signal output from the transistor. Thus, after data based on the amount of light entering the photoelectric conversion elements is held as the gate potentials of the transistors, the second switching elements are turned on, whereby signals in different periods can be obtained without being affected by characteristics of the photoelectric conversion element.
Public/Granted literature
- US09006635B2 Photodetector circuit and semiconductor device Public/Granted day:2015-04-14
Information query
IPC分类: