Methods For Selective Etching Of A Multi-Layer Substrate

Invention Application

US20140077147A1 Methods For Selective Etching Of A Multi-Layer Substrate 审中-公开

Title translation: 多层基板的选择性蚀刻方法

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Patent Title: Methods For Selective Etching Of A Multi-Layer Substrate
Patent Title (中): 多层基板的选择性蚀刻方法
Application No.: US14084843

Application Date: 2013-11-20
Publication No.: US20140077147A1

Publication Date: 2014-03-20
Inventor: Jinhong Tong , Frederick Carlos Fulgenico , ShouQian Shao
Applicant: Intermolecular Inc.
Applicant Address: US CA San Jose
Assignee: Intermolecular Inc.
Current Assignee: Intermolecular Inc.
Current Assignee Address: US CA San Jose
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H01L45/00

Methods For Selective Etching Of A Multi-Layer Substrate

Abstract:

A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum layer on a TiN layer on an HfO2 or ZrO2 layer on a substrate. In some embodiments, the method comprises a physical sputter process to selectively etch the platinum layer, followed by a plasma etch process comprises CHF3 and oxygen to selectively etch the TiN, HfO2 or ZrO2 layers with respect to the substrate.

Abstract(Chinese):

公开了一种用于选择性蚀刻包括在衬底上的HfO 2或ZrO 2层上的TiN层上的铂层的多层金属氧化物堆叠的方法。在一些实施例中，该方法包括用于选择性地蚀刻铂层的物理溅射工艺，接着是包括CHF 3和氧气的等离子体蚀刻工艺，以相对于衬底选择性地蚀刻TiN，HfO 2或ZrO 2层。

Public/Granted literature

US09330928B2 Methods for selective etching of a multi-layer substrate Public/Granted day:2016-05-03

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀