公开(公告)号：US08658511B1

公开(公告)日：2014-02-25

申请号：US13722714

申请日：2012-12-20

Applicant: Intermolecular Inc.

Inventor： Frederick Carlos Fulgenico ,  Vidyut Gopal ,  Jinhong Tong

IPC: H01L21/20

CPC classification number: H01L21/32136 ,  H01L21/31122 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1675

Abstract: Provided are methods for etching resistive switching and electrode layers in resistive random access memory (ReRAM) cells. Both types of layers are etched in the same operation. This approach simplifies processing in comparison to conventional etching, in which each layer is etched individually. The composition of etchants and process conditions are specifically selected to provide robust and effective etching of both types of layers. The two etching rates may be comparable and may be substantially the same, in some embodiments. Plasma etching involving tri-fluoro-methane and oxygen containing etchants may be used on electrode materials, such as titanium nitride, platinum, and ruthenium, and on resistive switching materials, such as oxides of transition metals. For example, a combination of titanium nitride and hafnium oxide may be etched using such processes. In some embodiments, an etched stack includes a third layer, which may function as a current limiter in ReRAM cells.

Abstract translation: 提供了用于蚀刻电阻式随机存取存储器（ReRAM）单元中的电阻开关和电极层的方法。 在相同的操作中蚀刻两种类型的层。 与常规蚀刻相比，该方法简化了处理，其中每个层被单独蚀刻。 特别选择蚀刻剂和工艺条件的组成以提供两种类型的层的鲁棒且有效的蚀刻。 在一些实施例中，两个蚀刻速率可以是可比较的并且可以基本上相同。 涉及三氟甲烷和含氧蚀刻剂的等离子体蚀刻可以用于电极材料，例如氮化钛，铂和钌，以及电阻开关材料，例如过渡金属的氧化物。 例如，可以使用这样的方法蚀刻氮化钛和氧化铪的组合。 在一些实施例中，蚀刻堆叠包括可在ReRAM单元中用作限流器的第三层。

公开(公告)号：US09330928B2

公开(公告)日：2016-05-03

申请号：US14084843

申请日：2013-11-20

Applicant: Intermolecular Inc.

Inventor： Jinhong Tong ,  Frederick Carlos Fulgenico ,  ShouQian Shao

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00 ,  H01L21/3065 ,  H01L21/3213 ,  H01L45/00 ,  H01L21/311 ,  H01L27/24

CPC classification number: H01L21/3065 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1675

Abstract: A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum layer on a TiN layer on an HfO2 or ZrO2 layer on a substrate. In some embodiments, the method comprises a physical sputter process to selectively etch the platinum layer, followed by a plasma etch process comprises CHF3 and oxygen to selectively etch the TiN, HfO2 or ZrO2 layers with respect to the substrate.

Abstract translation: 公开了一种用于选择性蚀刻包括在衬底上的HfO 2或ZrO 2层上的TiN层上的铂层的多层金属氧化物堆叠的方法。 在一些实施例中，该方法包括用于选择性地蚀刻铂层的物理溅射工艺，接着是包括CHF 3和氧气的等离子体蚀刻工艺，以相对于衬底选择性地蚀刻TiN，HfO 2或ZrO 2层。

公开(公告)号：US20140077147A1

公开(公告)日：2014-03-20

申请号：US14084843

申请日：2013-11-20

Applicant: Intermolecular Inc.

Inventor： Jinhong Tong ,  Frederick Carlos Fulgenico ,  ShouQian Shao

IPC: H01L21/3065 ,  H01L45/00

CPC classification number: H01L21/3065 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1675

Abstract: A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum layer on a TiN layer on an HfO2 or ZrO2 layer on a substrate. In some embodiments, the method comprises a physical sputter process to selectively etch the platinum layer, followed by a plasma etch process comprises CHF3 and oxygen to selectively etch the TiN, HfO2 or ZrO2 layers with respect to the substrate.

Abstract translation: 公开了一种用于选择性蚀刻包括在衬底上的HfO 2或ZrO 2层上的TiN层上的铂层的多层金属氧化物堆叠的方法。 在一些实施例中，该方法包括用于选择性地蚀刻铂层的物理溅射工艺，接着是包括CHF 3和氧气的等离子体蚀刻工艺，以相对于衬底选择性地蚀刻TiN，HfO 2或ZrO 2层。