发明申请
- 专利标题: Metal Bump and Method of Manufacturing Same
- 专利标题(中): 金属凸块及其制造方法相同
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申请号: US13904885申请日: 2013-05-29
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公开(公告)号: US20140077365A1公开(公告)日: 2014-03-20
- 发明人: Yen-Liang Lin , Yu-Jen Tseng , Chang-Chia Huang , Tin-Hao Kuo , Chen-Shien Chen
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L21/768
摘要:
An embodiment bump structure includes a contact element formed on a substrate, a passivation layer overlying the substrate, the passivation layer having a passivation opening exposing the contact element a polyimide layer overlying the passivation layer, the polyimide layer having a polyimide opening exposing the contact element an under bump metallurgy (UMB) feature electrically coupled to the contact element, the under bump metallurgy feature having a UBM width, and a copper pillar on the under bump metallurgy feature, a distal end of the copper pillar having a pillar width, the UBM width greater than the pillar width.
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