公开(公告)号：US09536850B2

公开(公告)日：2017-01-03

申请号：US13791160

申请日：2013-03-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Chen-Shien Chen ,  Yu-Jen Tseng

IPC分类号： H01L23/00 ,  H01L23/498

CPC分类号： H01L24/14 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13565 ,  H01L2224/13686 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81815 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/3841 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/053 ,  H01L2924/014 ,  H01L2924/00

摘要： A package and method of making the package are provided. An embodiment package includes an integrated circuit supporting a conductive pillar, a substrate having a landing pad on each embedded metal trace, a landing pad width greater than a corresponding embedded metal trace width, and a conductive material electrically coupling the conductive pillar to the landing pad. In an embodiment, the landing pad overlaps the metal trace in one direction.

摘要翻译： 提供制造包装的包装和方法。 实施例包装包括支撑导电柱的集成电路，在每个嵌入的金属迹线上具有着陆焊盘的基板，大于相应的嵌入金属迹线宽度的着陆焊盘宽度，以及将导电柱电连接到焊盘的导电材料 。 在一个实施例中，着陆垫在一个方向上与金属迹线重叠。

公开(公告)号：US09508668B2

公开(公告)日：2016-11-29

申请号：US14804617

申请日：2015-07-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Liang Lin ,  Yu-Jen Tseng ,  Chang-Chia Huang ,  Tin-Hao Kuo ,  Chen-Shien Chen

IPC分类号： H01L23/00 ,  H01L21/768 ,  H01L21/48 ,  H01L23/498

CPC分类号： H01L24/02 ,  H01L21/4853 ,  H01L21/76885 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02125 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/0401 ,  H01L2224/05114 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/10125 ,  H01L2224/11013 ,  H01L2224/11019 ,  H01L2224/1112 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/13012 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13551 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13686 ,  H01L2224/1369 ,  H01L2224/14051 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/81007 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/8181 ,  H01L2224/81895 ,  H01L2224/8192 ,  H01L2224/81948 ,  H01L2225/06513 ,  H01L2924/04941 ,  H01L2924/07025 ,  H01L2924/181 ,  H01L2924/301 ,  H01L2924/35 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/053 ,  H01L2924/00 ,  H01L2924/00012

摘要： A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar has a pillar width, and the UBM width is greater than the pillar width.

摘要翻译： 凸块结构包括形成在衬底上的接触元件和覆盖衬底的钝化层。 钝化层包括暴露接触元件的钝化开口。 凸起结构还包括覆盖钝化层的聚酰亚胺层和电耦合到接触元件的凸块下金属（UBM）特征。 聚酰亚胺层具有暴露接触元件的聚酰亚胺开口，凸起下的金属特征具有UBM宽度。 凸起结构还包括在凸起下金属冶金特征上的铜柱。 铜柱的前端具有柱宽，UBM宽度大于柱宽。

公开(公告)号：US20140252598A1

公开(公告)日：2014-09-11

申请号：US13791160

申请日：2013-03-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Mirng-Ji Lii ,  Chen-Shien Chen ,  Yu-Jen Tseng

IPC分类号： H01L23/00

CPC分类号： H01L24/14 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13565 ,  H01L2224/13686 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81815 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/3841 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/053 ,  H01L2924/014 ,  H01L2924/00

摘要： A package and method of making the package are provided. An embodiment package includes an integrated circuit supporting a conductive pillar, a substrate having a landing pad on each embedded metal trace, a landing pad width greater than a corresponding embedded metal trace width, and a conductive material electrically coupling the conductive pillar to the landing pad. In an embodiment, the landing pad overlaps the metal trace in one direction.

摘要翻译： 提供制造包装的包装和方法。 实施例包装包括支撑导电柱的集成电路，在每个嵌入的金属迹线上具有着陆焊盘的基板，大于相应的嵌入金属迹线宽度的着陆焊盘宽度，以及将导电柱电连接到焊盘的导电材料 。 在一个实施例中，着陆垫在一个方向上与金属迹线重叠。

公开(公告)号：US20140077365A1

公开(公告)日：2014-03-20

申请号：US13904885

申请日：2013-05-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Liang Lin ,  Yu-Jen Tseng ,  Chang-Chia Huang ,  Tin-Hao Kuo ,  Chen-Shien Chen

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L24/02 ,  H01L21/4853 ,  H01L21/76885 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02125 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/0401 ,  H01L2224/05114 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/10125 ,  H01L2224/11013 ,  H01L2224/11019 ,  H01L2224/1112 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/13012 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13551 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13686 ,  H01L2224/1369 ,  H01L2224/14051 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/81007 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/8181 ,  H01L2224/81895 ,  H01L2224/8192 ,  H01L2224/81948 ,  H01L2225/06513 ,  H01L2924/04941 ,  H01L2924/07025 ,  H01L2924/181 ,  H01L2924/301 ,  H01L2924/35 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/053 ,  H01L2924/00 ,  H01L2924/00012

摘要： An embodiment bump structure includes a contact element formed on a substrate, a passivation layer overlying the substrate, the passivation layer having a passivation opening exposing the contact element a polyimide layer overlying the passivation layer, the polyimide layer having a polyimide opening exposing the contact element an under bump metallurgy (UMB) feature electrically coupled to the contact element, the under bump metallurgy feature having a UBM width, and a copper pillar on the under bump metallurgy feature, a distal end of the copper pillar having a pillar width, the UBM width greater than the pillar width.

摘要翻译： 实施例的凸起结构包括形成在基底上的接触元件，覆盖在基底上的钝化层，钝化层具有暴露接触元件的钝化开口，覆盖钝化层的聚酰亚胺层，聚酰亚胺层具有暴露接触元件 电触点接触元件的凸起下金属（UMB）特征，具有UBM宽度的凸块下金属特征，以及在凸块下冶金特征上的铜柱，具有柱宽度的铜柱的远端，UBM 宽度大于柱宽。

公开(公告)号：US20170117245A1

公开(公告)日：2017-04-27

申请号：US15351184

申请日：2016-11-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Wei Lin ,  Sheng-Yu Wu ,  Yu-Jen Tseng ,  Tin-Hao Kuo ,  Chen-Shien Chen

IPC分类号： H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L21/48

CPC分类号： H01L24/02 ,  H01L21/4853 ,  H01L21/76885 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02125 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/0401 ,  H01L2224/05114 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/10125 ,  H01L2224/11013 ,  H01L2224/11019 ,  H01L2224/1112 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/13005 ,  H01L2224/13012 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13551 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13686 ,  H01L2224/1369 ,  H01L2224/14051 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/81007 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/8181 ,  H01L2224/81895 ,  H01L2224/8192 ,  H01L2224/81948 ,  H01L2225/06513 ,  H01L2924/04941 ,  H01L2924/07025 ,  H01L2924/181 ,  H01L2924/301 ,  H01L2924/35 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/053 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2924/207

摘要： An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.

公开(公告)号：US20170069587A1

公开(公告)日：2017-03-09

申请号：US15356316

申请日：2016-11-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Liang Lin ,  Yu-Jen Tseng ,  Chang-Chia Huang ,  Tin-Hao Kuo ,  Chen-Shien Chen

IPC分类号： H01L23/00

CPC分类号： H01L24/02 ,  H01L21/4853 ,  H01L21/76885 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02125 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/0401 ,  H01L2224/05114 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/10125 ,  H01L2224/11013 ,  H01L2224/11019 ,  H01L2224/1112 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/13012 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13551 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13686 ,  H01L2224/1369 ,  H01L2224/14051 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/81007 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/8181 ,  H01L2224/81895 ,  H01L2224/8192 ,  H01L2224/81948 ,  H01L2225/06513 ,  H01L2924/04941 ,  H01L2924/07025 ,  H01L2924/181 ,  H01L2924/301 ,  H01L2924/35 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/053 ,  H01L2924/00 ,  H01L2924/00012

摘要： A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar has a pillar width, and the UBM width is greater than the pillar width.

摘要翻译： 凸块结构包括形成在衬底上的接触元件和覆盖衬底的钝化层。 钝化层包括暴露接触元件的钝化开口。 凸起结构还包括覆盖钝化层的聚酰亚胺层和电耦合到接触元件的凸块下金属（UBM）特征。 聚酰亚胺层具有暴露接触元件的聚酰亚胺开口，凸起下的金属特征具有UBM宽度。 凸起结构还包括在凸起下金属冶金特征上的铜柱。 铜柱的前端具有柱宽，UBM宽度大于柱宽。

公开(公告)号：US09111817B2

公开(公告)日：2015-08-18

申请号：US13712722

申请日：2012-12-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Guan-Yu Chen ,  Yu-Wei Lin ,  Yu-Jen Tseng ,  Tin-Hao Kuo ,  Chen-Shien Chen

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H01L21/48 ,  H01L23/498

CPC分类号： H01L24/02 ,  H01L21/4853 ,  H01L21/76885 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02125 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/0401 ,  H01L2224/05114 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/10125 ,  H01L2224/11013 ,  H01L2224/11019 ,  H01L2224/1112 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/13012 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13551 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13686 ,  H01L2224/1369 ,  H01L2224/14051 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/81007 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/8181 ,  H01L2224/81895 ,  H01L2224/8192 ,  H01L2224/81948 ,  H01L2225/06513 ,  H01L2924/04941 ,  H01L2924/07025 ,  H01L2924/181 ,  H01L2924/301 ,  H01L2924/35 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/053 ,  H01L2924/00 ,  H01L2924/00012

摘要： An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal bump on the under bump metallurgy feature, and a substrate trace on a substrate, the substrate trace coupled to the metal bump through a solder joint and intermetallic compounds, a ratio of a first cross sectional area of the intermetallic compounds to a second cross sectional area of the solder joint greater than forty percent.

摘要翻译： 轨迹（BOT）结构上的实施例凸块包括由集成电路支撑的接触元件，电耦合到接触元件的凸块下金属（UBM）特征，凸起下金属冶金特征上的金属凸块，以及衬底迹线 衬底，通过焊接接头和金属间化合物耦合到金属凸块的衬底迹线，金属间化合物的第一横截面积与焊料接头的第二横截面积的比率大于百分之四十。

公开(公告)号：US20140117534A1

公开(公告)日：2014-05-01

申请号：US13664176

申请日：2012-10-30

申请人： Taiwan Semiconductor Manufacturing Company. Ltd.

发明人： Hao-Juin Liu ,  Yao-Chun Chuang ,  Chita Chuang ,  Yu-Jen Tseng ,  Chen-Shien Chen

IPC分类号： H01L23/485 ,  H01L21/768 ,  H01L23/482

CPC分类号： H01L23/3192 ,  H01L23/293 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2924/206

摘要： A structure comprises a first passivation layer formed over a substrate, a second passivation layer formed over the first passivation layer, wherein the second passivation layer includes a first opening with a first dimension, a bond pad embedded in the first passivation layer and the second passivation layer, a protection layer formed on the second passivation layer comprising a second opening with a second dimension, wherein the second dimension is greater than the first dimension and a connector formed on the bond pad.

摘要翻译： 一种结构包括形成在衬底上的第一钝化层，形成在第一钝化层上的第二钝化层，其中第二钝化层包括具有第一尺寸的第一开口，嵌入在第一钝化层中的接合焊盘和第二钝化层 层，形成在所述第二钝化层上的保护层包括具有第二尺寸的第二开口，其中所述第二尺寸大于所述第一尺寸，以及形成在所述接合垫上的连接器。

公开(公告)号：US20140077359A1

公开(公告)日：2014-03-20

申请号：US13734811

申请日：2013-01-04

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Pei-Chun Tsai ,  Yu-Jen Tseng ,  Tin-Hao Kuo ,  Chen-Shien Chen

IPC分类号： H01L23/498 ,  H01L21/48

CPC分类号： H01L24/02 ,  H01L21/4853 ,  H01L21/76885 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02125 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/0401 ,  H01L2224/05114 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/10125 ,  H01L2224/11013 ,  H01L2224/11019 ,  H01L2224/1112 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/13012 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13551 ,  H01L2224/13564 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13686 ,  H01L2224/1369 ,  H01L2224/14051 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/81007 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/8181 ,  H01L2224/81895 ,  H01L2224/8192 ,  H01L2224/81948 ,  H01L2225/06513 ,  H01L2924/04941 ,  H01L2924/07025 ,  H01L2924/181 ,  H01L2924/301 ,  H01L2924/35 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/053 ,  H01L2924/00 ,  H01L2924/00012

摘要： An embodiment ladder bump structure includes an under bump metallurgy (UBM) feature supported by a substrate, a copper pillar mounted on the UBM feature, the copper pillar having a tapering curved profile, which has a larger bottom critical dimension (CD) than a top critical dimension (CD) in an embodiment, a metal cap mounted on the copper pillar, and a solder feature mounted on the metal cap.

摘要翻译： 一种实施例的梯形凸起结构包括由衬底支撑的凸块下金属（UBM）特征，安装在UBM特征上的铜柱，铜柱具有锥形弯曲轮廓，其具有比顶部更大的底部临界尺寸（CD） 实施例中的临界尺寸（CD），安装在铜柱上的金属盖以及安装在金属盖上的焊料特征。

公开(公告)号：US11043462B2

公开(公告)日：2021-06-22

申请号：US16436626

申请日：2019-06-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Wei Lin ,  Sheng-Yu Wu ,  Yu-Jen Tseng ,  Tin-Hao Kuo ,  Chen-Shien Chen

IPC分类号： H01L25/16 ,  H01L21/48 ,  H01L23/00 ,  H01L21/768 ,  H01L25/065 ,  H01L25/00 ,  H01L23/498

摘要： An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.