Invention Application
- Patent Title: Method of Fabricating High Efficiency CIGS Solar Cells
- Patent Title (中): 制造高效CIGS太阳能电池的方法
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Application No.: US13727845Application Date: 2012-12-27
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Publication No.: US20140080250A1Publication Date: 2014-03-20
- Inventor: Haifan Liang , Jessica Eid , Jeroen Van Duren
- Applicant: INTERMOLECULAR, INC.
- Applicant Address: US CA San Jose
- Assignee: INTERMOLECULAR, INC.
- Current Assignee: INTERMOLECULAR, INC.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L31/18
- IPC: H01L31/18

Abstract:
A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a system suitable for exposing the precursor to a chalcogen to form a chalcogenide TFPV absorber. One or more Na precursors are used to deposit a Na-containing layer on the precursor film in the system. This method eliminates the use of dedicated equipment and processes for introducing Na to the TFPV absorber.
Public/Granted literature
- US08900664B2 Method of fabricating high efficiency CIGS solar cells Public/Granted day:2014-12-02
Information query
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