公开(公告)号：US08900664B2

公开(公告)日：2014-12-02

申请号：US13727845

申请日：2012-12-27

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Jessica Eid ,  Jeroen Van Duren

IPC: C23C16/00 ,  H01L31/18 ,  H01L31/032 ,  H01L31/0392 ,  H01L31/065 ,  H01L31/0749 ,  H01L21/02

CPC classification number: H01L31/18 ,  H01L21/02551 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/065 ,  H01L31/0749 ,  Y02E10/541

Abstract: A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a system suitable for exposing the precursor to a chalcogen to form a chalcogenide TFPV absorber. One or more Na precursors are used to deposit a Na-containing layer on the precursor film in the system. This method eliminates the use of dedicated equipment and processes for introducing Na to the TFPV absorber.

Abstract translation: 公开了一种用于制造高效CIGS太阳能电池的方法，包括在基板上沉积多组分金属前体膜。 然后将基底插入适于将前体暴露于硫属元素的系统中以形成硫族化物TFPV吸收剂。 一种或多种Na前体用于在系统中的前体膜上沉积含Na层。 该方法消除了将Na引入TFPV吸收器的专用设备和方法的使用。

公开(公告)号：US20140273311A1

公开(公告)日：2014-09-18

申请号：US14105797

申请日：2013-12-13

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Jessica Eid ,  Minh Huu Le ,  Jeroen Van Duren

IPC: H01L33/30 ,  H01L21/66

CPC classification number: H01L22/12 ,  H01L31/0322 ,  H01L31/0749 ,  H01L2924/0002 ,  Y02E10/541 ,  Y02P70/521 ,  H01L2924/00

Abstract: Optical absorbers and methods are disclosed. The methods comprise depositing a plurality of precursor layers comprising one or more of Cu, Ga, and In on a substrate, and heating the layers in a chalcogenizing atmosphere. The plurality of precursor layers can be one or more sets of layers comprising at least two layers, wherein each layer in each set of layers comprises one or more of Cu, Ga, and In exhibiting a single phase. The layers can be deposited using two or three targets selected from Ag and In containing less than 21% In by weight, Cu and Ga where the Cu and Ga target comprises less than 45% Ga by weight, Cu(In,Ga), wherein the Cu(In,Ga) target has an atomic ratio of Cu to (In+Ga) greater than 2 and an atomic ratio of Ga to (Ga+In) greater than 0.5, elemental In, elemental Cu, and In2Se3 and In2S3.

Abstract translation: 公开了光吸收剂和方法。 所述方法包括在衬底上沉积包含Cu，Ga和In中的一种或多种的多个前体层，并在硫属化气氛中加热层。 多个前体层可以是包括至少两个层的一组或多组层，其中每组层中的每个层包括一个或多个Cu，Ga和In，其表现出单相。 这些层可以使用选自Ag和In的两个或三个靶，其中Cu和Ga的重量比小于45重量％的Cu（In，Ga）含有小于21重量％的Cu和Ga，其中Cu和 Cu（In，Ga）靶的Cu与（In + Ga）的原子比大于2，Ga与（Ga + In）的原子比大于0.5，元素In，元素Cu，In2Se3和In2S3。

公开(公告)号：US09177876B2

公开(公告)日：2015-11-03

申请号：US14105797

申请日：2013-12-13

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Jessica Eid ,  Minh Huu Le ,  Jeroen Van Duren

IPC: H01L21/66 ,  H01L31/032 ,  H01L31/0749

CPC classification number: H01L22/12 ,  H01L31/0322 ,  H01L31/0749 ,  H01L2924/0002 ,  Y02E10/541 ,  Y02P70/521 ,  H01L2924/00

Abstract: Optical absorbers and methods are disclosed. The methods comprise depositing a plurality of precursor layers comprising one or more of Cu, Ga, and In on a substrate, and heating the layers in a chalcogenizing atmosphere. The plurality of precursor layers can be one or more sets of layers comprising at least two layers, wherein each layer in each set of layers comprises one or more of Cu, Ga, and In exhibiting a single phase. The layers can be deposited using two or three targets selected from Ag and In containing less than 21% In by weight, Cu and Ga where the Cu and Ga target comprises less than 45% Ga by weight, Cu(In,Ga), wherein the Cu(In,Ga) target has an atomic ratio of Cu to (In+Ga) greater than 2 and an atomic ratio of Ga to (Ga+In) greater than 0.5, elemental In, elemental Cu, and In2Se3 and In2S3.

Abstract translation: 公开了光吸收剂和方法。 所述方法包括在衬底上沉积包含Cu，Ga和In中的一种或多种的多个前体层，并在硫属化气氛中加热层。 多个前体层可以是包括至少两个层的一组或多组层，其中每组层中的每个层包括一个或多个Cu，Ga和In，其表现出单相。 这些层可以使用选自Ag和In的两个或三个靶，其中Cu和Ga的重量比小于45重量％的Cu（In，Ga）含有小于21重量％的Cu和Ga，其中Cu和 Cu（In，Ga）靶的Cu与（In + Ga）的原子比大于2，Ga与（Ga + In）的原子比大于0.5，元素In，元素Cu，In2Se3和In2S3。

公开(公告)号：US20140080250A1

公开(公告)日：2014-03-20

申请号：US13727845

申请日：2012-12-27

Applicant: INTERMOLECULAR, INC.

Inventor： Haifan Liang ,  Jessica Eid ,  Jeroen Van Duren

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L21/02551 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/065 ,  H01L31/0749 ,  Y02E10/541

Abstract: A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a system suitable for exposing the precursor to a chalcogen to form a chalcogenide TFPV absorber. One or more Na precursors are used to deposit a Na-containing layer on the precursor film in the system. This method eliminates the use of dedicated equipment and processes for introducing Na to the TFPV absorber.

Abstract translation: 公开了一种用于制造高效CIGS太阳能电池的方法，包括在基板上沉积多组分金属前体膜。 然后将基底插入适于将前体暴露于硫属元素的系统中以形成硫族化物TFPV吸收剂。 一种或多种Na前体用于在系统中的前体膜上沉积含Na层。 该方法消除了将Na引入TFPV吸收器的专用设备和方法的使用。