发明申请
- 专利标题: LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF
- 专利标题(中): 发光二极管及其制造方法
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申请号: US13948197申请日: 2013-07-23
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公开(公告)号: US20140084326A1公开(公告)日: 2014-03-27
- 发明人: LUNG-HSIN CHEN , WEN-LIANG TSENG
- 申请人: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 申请人地址: TW Hsinchu Hsien 303
- 专利权人: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人地址: TW Hsinchu Hsien 303
- 优先权: CN2012103690048 20120927
- 主分类号: H01L33/62
- IPC分类号: H01L33/62
摘要:
A light-emitting diode includes a ceramic substrate, an electrode group setting on the substrate and co-fired with the ceramic substrate, an LED chip setting on the substrate and electrically connecting the electrode group. The electrode includes a first electrode and a second electrode spacing from the first electrode. The first electrode and the second electrode extend from a top surface of the substrate to a bottom surface of the substrate via side surfaces of the substrate. The light-emitting diode can be connected to a power source by the electrode group on the bottom surface of the substrate or by the electrode group on the side surfaces of the substrate.
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