Invention Application
- Patent Title: Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Patent Title (中): 相变材料在无定形相中干扰的抗扰度
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Application No.: US14102820Application Date: 2013-12-11
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Publication No.: US20140098604A1Publication Date: 2014-04-10
- Inventor: George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
- Applicant: Ovonyx, Inc.
- Applicant Address: US MI Sterling Heights
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Sterling Heights
- Main IPC: G11C29/04
- IPC: G11C29/04 ; G11C13/00
Abstract:
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
Public/Granted literature
- US08861293B2 Immunity of phase change material to disturb in the amorphous phase Public/Granted day:2014-10-14
Information query
