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公开(公告)号：US20140328121A1
公开(公告)日：2014-11-06
申请号：US14336600
申请日：2014-07-21
Applicant: Ovonyx, Inc.
Inventor： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC classification number: G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
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公开(公告)号：US20150206581A1
公开(公告)日：2015-07-23
申请号：US14672332
申请日：2015-03-30
Applicant: Ovonyx, Inc.
Inventor： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC classification number: G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
Abstract translation: 通过在对相变存储器中的复位状态进行编程时产生基本上不含结晶核的非晶相，可以减小从复位到设定状态的干扰。 在一些实施例中，这可以通过使用超过相变存储元件的阈值电压的电流或电压来实现，但不超过将导致干扰的安全电流电压来实现。
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Patent Agency Ranking
公开(公告)号：US09036409B2
公开(公告)日：2015-05-19
申请号：US14336600
申请日：2014-07-21
Applicant: Ovonyx, Inc.
Inventor： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC classification number: G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
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公开(公告)号：US09251895B2
公开(公告)日：2016-02-02
申请号：US14512545
申请日：2014-10-13
Applicant: Ovonyx, Inc.
Inventor： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC classification number: G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
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公开(公告)号：US08861293B2
公开(公告)日：2014-10-14
申请号：US14102820
申请日：2013-12-11
Applicant: Ovonyx, Inc.
Inventor： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC classification number: G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
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公开(公告)号：US20140098604A1
公开(公告)日：2014-04-10
申请号：US14102820
申请日：2013-12-11
Applicant: Ovonyx, Inc.
Inventor： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC classification number: G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
Abstract translation: 通过在对相变存储器中的复位状态进行编程时产生基本上不含结晶核的非晶相，可以减小从复位到设定状态的干扰。 在一些实施例中，这可以通过使用超过相变存储元件的阈值电压的电流或电压来实现，但不超过将导致干扰的安全电流电压来实现。
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公开(公告)号：US20150109857A1
公开(公告)日：2015-04-23
申请号：US14512545
申请日：2014-10-13
Applicant: Ovonyx, Inc.
Inventor： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC classification number: G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
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