发明申请
- 专利标题： SEMICONDUCTOR STRUCTURE WITH REDUCED JUNCTION LEAKAGE AND METHOD OF FABRICATION THEREOF
- 专利标题（中）： 具有降低接合漏电的半导体结构及其制造方法
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申请号： US14133743申请日： 2013-12-19
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公开(公告)号： US20140103406A1公开(公告)日： 2014-04-17
- 发明人: Lingquan Wang , Teymur Bakhishev , Dalong Zhao , Pushkar Ranade , Sameer Pradhan , Thomas Hoffmann , Lucian Shifren , Lance Scudder
- 申请人： Lingquan Wang , Teymur Bakhishev , Dalong Zhao , Pushkar Ranade , Sameer Pradhan , Thomas Hoffmann , Lucian Shifren , Lance Scudder
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66
摘要：
A semiconductor structure is formed with a NFET device and a PFET device. The NFET device is formed by masking the PFET device regions of a substrate, forming a screen layer through epitaxial growth and in-situ doping, and forming an undoped channel layer on the screen layer through epitaxial growth. The PFET device is similarly formed by masking the NFET regions of a substrate, forming a screen layer through epitaxial growth and in-situ doping, and forming an undoped channel layer on the screen layer through epitaxial growth. An isolation region is formed between the NFET and the PFET device areas to remove any facets occurring during the separate epitaxial growth phases. By forming the screen layer through in-situ doped epitaxial growth, a reduction in junction leakage is achieved versus forming the screen layer using ion implantation.
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