发明申请
- 专利标题： GATE ELECTRODE HAVING A CAPPING LAYER
- 专利标题（中）： 具有盖层的门电极
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申请号： US14136589申请日： 2013-12-20
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公开(公告)号： US20140103458A1公开(公告)日： 2014-04-17
- 发明人: Gilbert Dewey , Mark L. Doczy , Suman Datta , Justin K. Brask , Matthew V. Metz
- 申请人： Gilbert Dewey , Mark L. Doczy , Suman Datta , Justin K. Brask , Matthew V. Metz
- 主分类号： H01L29/51
- IPC分类号： H01L29/51
摘要：
A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer in-situ on a gate dielectric layer, before any high temperature processing steps are performed.
公开/授权文献
- US09287380B2 Gate electrode having a capping layer 公开/授权日：2016-03-15
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