发明申请
- 专利标题： CONTACT STRUCTURE
- 专利标题（中）： 接触结构
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申请号： US13659219申请日： 2012-10-24
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公开(公告)号： US20140110823A1公开(公告)日： 2014-04-24
- 发明人: Chung-Yen Chou , Po-ken Lin , Shih-Chang Liu , Chia-Shiung Tsai
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/02
摘要：
One or more techniques or systems for forming a contact structure for a deep trench capacitor (DTC) are provided herein. In some embodiments, a contact structure includes a substrate region, a first region, a second region, contact landings, a first trench region, a first landing region, and a second trench region. In some embodiments, a first region is over the substrate region and a second region is over the first region. For example, the first region and the second region are in the first trench region or the second trench region. Additionally, a contact landing over the first trench region, the second trench region, or the first landing region is in contact with the first region, the second region, or the substrate region. In this manner, additional contacts are provided and landing area is reduced, thus reducing resistance of the DTC, for example.
公开/授权文献
- US09960285B2 Contact structure 公开/授权日：2018-05-01
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