发明申请
US20140112370A1 THROTTLING MEMORY IN RESPONSE TO AN INTERNAL TEMPERATURE OF A MEMORY DEVICE 有权
响应内存设备内部温度的内存记忆

  • 专利标题: THROTTLING MEMORY IN RESPONSE TO AN INTERNAL TEMPERATURE OF A MEMORY DEVICE
  • 专利标题(中): 响应内存设备内部温度的内存记忆
  • 申请号: US14142466
    申请日: 2013-12-27
  • 公开(公告)号: US20140112370A1
    公开(公告)日: 2014-04-24
  • 发明人: Pochang HsuAnimesh MishraJun Shi
  • 申请人: Pochang HsuAnimesh MishraJun Shi
  • 主分类号: G01K13/00
  • IPC分类号: G01K13/00
THROTTLING MEMORY IN RESPONSE TO AN INTERNAL TEMPERATURE OF A MEMORY DEVICE
摘要:
Systems and methods of managing memory devices provide for reduced power consumption and better thermal management through enhanced memory throttling. In one embodiment a memory unit includes a memory device and a temperature measurement module coupled to the memory device. The temperature measurement device measures the internal temperature of the memory device. Memory throttling can therefore be implemented based on more accurate measurements and with a much shorter response time.
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