发明申请
- 专利标题： PHOTOMASK AND METHOD OF FORMING THE SAME
- 专利标题（中）： 照相机及其形成方法
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申请号： US14059533申请日： 2013-10-22
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公开(公告)号： US20140113221A1公开(公告)日： 2014-04-24
- 发明人: Jong Keun OH , Hyungho KO , Inkyun SHIN , Jaehyuck CHOI , JunYoul CHOI
- 申请人： Jong Keun OH , Hyungho KO , Inkyun SHIN , Jaehyuck CHOI , JunYoul CHOI
- 优先权： KR10-2012-0117361 20121022
- 主分类号： G03F1/50
- IPC分类号： G03F1/50
摘要：
A photomask and a method of forming the same, the photomask including a transparent substrate; a light shielding pattern on the transparent substrate, the light shielding pattern including molybdenum and silicon; and an etch stop layer covering at least a sidewall of the light shielding pattern, wherein the etch stop layer has an etch rate lower than an etch rate of the light shielding pattern with respect to an ammonia-based cleaning solution.
公开/授权文献
- US09223199B2 Photomask and method of forming the same 公开/授权日：2015-12-29
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