Invention Application
- Patent Title: Self-Biasing Radio Frequency Circuitry
- Patent Title (中): 自偏置射频电路
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Application No.: US14134223Application Date: 2013-12-19
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Publication No.: US20140132349A1Publication Date: 2014-05-15
- Inventor: Jinho Park , Yuan Lu , Li Lin
- Applicant: MARVELL WORLD TRADE LTD.
- Applicant Address: BB St. Michael
- Assignee: MARVELL WORLD TRADE LTD.
- Current Assignee: MARVELL WORLD TRADE LTD.
- Current Assignee Address: BB St. Michael
- Priority: KR10-2013-7021823 20101111; CN201280005541.2 20120112; TW101101224 20120112; USPCT/US12/21032 20120112
- Main IPC: H03F3/30
- IPC: H03F3/30

Abstract:
The present disclosure describes self-biasing radio frequency circuitry. In some aspects a radio frequency (RF) signal is amplified via a circuit having a first transistor configured to source current to an output of the circuit and a second transistor configured to sink current from the output of the circuit, and another signal is provided, without active circuitry, from the output of the circuit to a gate of the first transistor effective to bias a voltage at the output of the circuit. By so doing, the output of the circuit can be biased without active circuitry which can reduce design complexity of and substrate area consumed by the circuit.
Public/Granted literature
- US09362872B2 Self-biasing radio frequency circuitry Public/Granted day:2016-06-07
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