Invention Application
US20140135246A1 CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
审中-公开
清洁组合物，清洁工艺和生产半导体器件的方法
- Patent Title: CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
- Patent Title (中): 清洁组合物，清洁工艺和生产半导体器件的方法
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Application No.: US14158454Application Date: 2014-01-17
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Publication No.: US20140135246A1Publication Date: 2014-05-15
- Inventor: Atsushi MIZUTANI , Hideo FUSHIMI , Tomonori TAKAHASHI , Kazutaka TAKAHASHI
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2010-070821 20100325
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.
Public/Granted literature
- US09396926B2 Cleaning composition, cleaning process, and process for producing semiconductor device Public/Granted day:2016-07-19
Information query
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