公开(公告)号：US20240400949A1

公开(公告)日：2024-12-05

申请号：US18800584

申请日：2024-08-12

Applicant: FUJIFILM Corporation

Inventor： Naoya SHIMOJU ,  Yasuo SUGISHIMA ,  Tomonori TAKAHASHI

IPC: C11D7/32 ,  C07C211/27 ,  C07C217/60 ,  C08F12/22 ,  C08F12/28 ,  C08F20/06 ,  C08F20/28 ,  C08F20/56 ,  C08F22/02 ,  C08F22/38 ,  C08F26/06 ,  C08F28/02 ,  C11D7/34 ,  H01L21/02

Abstract: The present invention provides a composition for a semiconductor device, where the composition is such that the removability of residues is excellent and the dissolution of tungsten is further suppressed. The composition for a semiconductor device contains a resin having a repeating unit A derived from a polymerizable compound containing a nitrogen atom and water, where a ClogP of the polymerizable compound is 0.5 or more and a solubility of the resin in water at 25° C. is 0.01% by mass or more.

公开(公告)号：US20210180192A1

公开(公告)日：2021-06-17

申请号：US17183449

申请日：2021-02-24

Applicant: FUJIFILM Corporation

Inventor： Nobuaki SUGIMURA ,  Tomonori TAKAHASHI ,  Hiroyuki SEKI

IPC: C23F1/26

Abstract: The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO42−, NO3−, PO43−, and BO33−. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two or more kinds of the specific anions, a content of each of two or more kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two or more kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.

公开(公告)号：US20240231237A9

公开(公告)日：2024-07-11

申请号：US18400807

申请日：2023-12-29

Applicant: FUJIFILM Corporation

Inventor： Tomonori TAKAHASHI ,  Tetsuya KAMIMURA

IPC: G03F7/42 ,  C11D3/00 ,  C11D7/04 ,  C11D7/20 ,  C11D7/26 ,  C11D7/32 ,  C11D7/34 ,  C11D7/50 ,  H01L21/02

CPC classification number: G03F7/425 ,  C11D3/0073 ,  C11D7/04 ,  C11D7/20 ,  C11D7/261 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3227 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/5004 ,  C11D7/5009 ,  C11D7/5022 ,  G03F7/423 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/02068 ,  C11D2111/22

Abstract: A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10−12 to 10−4.

公开(公告)号：US20200165547A1

公开(公告)日：2020-05-28

申请号：US16774220

申请日：2020-01-28

Applicant: FUJIFILM Corporation

Inventor： Tomonori TAKAHASHI ,  Tetsuya KAMIMURA

IPC: C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02

Abstract: A treatment liquid for a semiconductor device is a treatment liquid including water, an organic solvent, and two or more nitrogen-containing aromatic heterocyclic compounds.

公开(公告)号：US20230101156A1

公开(公告)日：2023-03-30

申请号：US17893303

申请日：2022-08-23

Applicant: FUJIFILM Corporation

Inventor： Kohei HAYASHI ,  Tomonori TAKAHASHI

IPC: C09K13/06 ,  C09K13/08 ,  C11D11/00 ,  C11D1/65

Abstract: A treatment liquid is a treatment liquid including water; a cationic compound; an anionic compound selected from the group consisting of a resin having a carboxy group or a salt thereof, a resin having a sulfo group or a salt thereof, a resin having a phosphorous acid group or a salt thereof, and a resin having a phosphoric acid group or a salt thereof; and an oxidizing agent, in which the treatment liquid has a pH of 7.0 or less, and the treatment liquid is substantially free of abrasive grains.

公开(公告)号：US20220002622A1

公开(公告)日：2022-01-06

申请号：US17477554

申请日：2021-09-17

Applicant: FUJIFILM Corporation

Inventor： Tomonori TAKAHASHI ,  Yasuo SUGISHIMA

IPC: C09K13/00 ,  H01L21/02 ,  B08B3/08 ,  C23F1/34 ,  C23F1/36 ,  C23F1/38 ,  C23F1/40 ,  H01L21/3213

Abstract: The present invention provides a chemical liquid that causes a small variation in a dissolving amount of a first metal-containing substance in a case where the chemical liquid is applied to an object to be treated containing the first metal-containing substance. The present invention also provides a method for treating an object to be treated. The chemical liquid according to an embodiment of the present invention contains water, a hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, and a specific compound represented by Formula (1).

公开(公告)号：US20200347299A1

公开(公告)日：2020-11-05

申请号：US16924800

申请日：2020-07-09

Applicant: FUJIFILM Corporation

Inventor： Tomonori TAKAHASHI ,  Nobuaki Sugimura ,  Hiroyuki Seki

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/02

Abstract: The present invention provides a chemical solution, which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated, and a treatment method using the chemical solution. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate and includes periodic acids and a compound including one or more kinds of anions selected from the group consisting of IO3−, I−, and I3−, in which a content of the compound including anions with respect to a total mass of the chemical solution is 5 ppb by mass to 1% by mass.

公开(公告)号：US20190079409A1

公开(公告)日：2019-03-14

申请号：US16190494

申请日：2018-11-14

Applicant: FUJIFILM Corporation

Inventor： Tomonori TAKAHASHI ,  Tetsuya KAMIMURA

IPC: G03F7/42 ,  C11D3/00 ,  C11D7/50 ,  C11D7/32 ,  C11D7/20 ,  C11D7/04 ,  H01L21/02

Abstract: A treatment liquid for a semiconductor device contains an organic alkali compound, a corrosion inhibitor, an organic solvent, Ca, Fe, and Na, in which each of the mass ratio of the Ca, the mass ratio of the Fe, and the mass ratio of the Na to the organic alkali compound in the treatment liquid is 10—12 to 10−4. A method for washing a substrate and a method for removing a resist use the treatment liquid.

公开(公告)号：US20240134284A1

公开(公告)日：2024-04-25

申请号：US18400807

申请日：2023-12-29

Applicant: FUJIFILM Corporation

Inventor： Tomonori TAKAHASHI ,  Tetsuya KAMIMURA

IPC: G03F7/42 ,  C11D3/00 ,  C11D7/04 ,  C11D7/20 ,  C11D7/26 ,  C11D7/32 ,  C11D7/34 ,  C11D7/50 ,  H01L21/02

CPC classification number: G03F7/425 ,  C11D3/0073 ,  C11D7/04 ,  C11D7/20 ,  C11D7/261 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3227 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/5004 ,  C11D7/5009 ,  C11D7/5022 ,  G03F7/423 ,  G03F7/426 ,  H01L21/02063 ,  H01L21/02068 ,  C11D2111/22

Abstract: A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10−12 to 10−4.

公开(公告)号：US20230416605A1

公开(公告)日：2023-12-28

申请号：US18462804

申请日：2023-09-07

Applicant: FUJIFILM Corporation

Inventor： Yuta SHIGENOI ,  Atsushi MIZUTANI ,  Tomonori TAKAHASHI

IPC: C09K13/00 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/00 ,  H01L21/31111 ,  H01L21/32134

Abstract: Provided is a chemical liquid that has an excellent etching ability for an Al oxide on a substrate and excellent etching selectivity between Al oxide and a specific metal oxide. Also provided is a treatment method using the chemical liquid. The chemical liquid contains at least one hydroxy acid selected from the group consisting of a hydroxy acid and a salt thereof, a quaternary ammonium compound, a trialkylamine, and water, and is alkaline.