发明申请
- 专利标题: Secondary Memory Device
- 专利标题(中): 辅助存储设备
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申请号: US14087095申请日: 2013-11-22
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公开(公告)号: US20140146461A1公开(公告)日: 2014-05-29
- 发明人: Jin-young Choi , Joon-young Oh , Hee-youb Kang , Jung-hoon Kim , Won-hwa Lee , Jae-beom Byun , Jong-yun Yun
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 优先权: KR10-2012-0134863 20121126
- 主分类号: H05K7/20
- IPC分类号: H05K7/20
摘要:
A secondary memory device includes: a substrate and a housing configured to accommodate at least a part of the substrate. The substrate has upper and lower opposed surfaces and includes a first region in which a first semiconductor device is mounted on the upper surface and a second region in which a second semiconductor device is mounted on the upper surface. The housing includes a first sub-housing covering the upper surface of the substrate at the first region and the first semiconductor device. The first sub-housing does not extend to cover the upper surface of the substrate at the second region.
公开/授权文献
- US09684345B2 Secondary memory device 公开/授权日:2017-06-20
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