Invention Application
- Patent Title: GALLIUM NITRIDE SUBSTRATE AND METHOD FOR FABRICATING THE SAME
- Patent Title (中): 氮化铝基板及其制造方法
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Application No.: US14096189Application Date: 2013-12-04
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Publication No.: US20140151714A1Publication Date: 2014-06-05
- Inventor: Ki Yon PARK , Hwa Mok Kim , Daewoong Suh , Young Hwan Son
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee Address: KR Ansan-si
- Priority: KR10-2012-0139784 20121204
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/12 ; H01L33/00
Abstract:
Exemplary embodiments of the present invention relate to a single-crystal substrate including a buffer layer including a nitride semiconductor, holes penetrating the buffer layer, and a single-crystal nitride semiconductor disposed on the buffer layer.
Information query
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